MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD530N15N3GATMA1


MOSFET MV POWER MOS
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Infineon 8942
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AUD 0.8045
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21 A150 V44 mOhmsN - Channel 2 V- 55 C+ 175 C68 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V12 nCEnhancement Optimos
FDC5614P


SOT-23-6 MOSFETs ROHS
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MSKSEMI 8196
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AUD 0.1382
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IRF7342TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 8178
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AUD 0.2655
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MCU60P06-TP


MOSFET P-Ch -60Vds 20Vgs 130W -60A -260A Idm
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Micro Commercial Components (MCC) 8175
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AUD 1.6369
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IPB025N08N3 G


Infineon Technologies MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3
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Infineon 8172
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AUD 4.5635
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120 A80 V2.5 mOhmsN - Channel20 V - 55 C+ 175 C300 WSmd/SmtD2PAK - 2ReelSi1 Channel20 V Enhancement Optimos
BSS806N H6327


Infineon Technologies MOSFET N-Ch 20V 2.3A SOT-23-3
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Infineon 8162
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AUD 0.0919
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2.3 A20 V41 mOhmsN - Channel 550 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V1.7 nCEnhancementAec - Q101 
NTLJF4156NT1G


MOSFET NFET 2X2 30V 4A 70MOHM
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ON Semiconductor 8151
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AUD 0.3352
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3.7 A30 V70 mOhmsN - Channel  - 55 C+ 150 C1.5 WSmd/SmtDFN - 6 , 2 x 2ReelSi1 Channel8 V Enhancement  
2SK3492-TL-E


GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
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ON Semiconductor 8148
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AUD 0.8597
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IAUS300N10S5N015TATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 8145
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AUD 4.6627
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300 A100 V1.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C375 WSMD/SMTHSOG - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V166 nCEnhancement  
NTF3055L108T1G


SOT-223 MOSFETs ROHS
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TECH PUBLIC 6964
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AUD 0.2341
Multiples of: 5

                   
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