MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFP9140NPBF


MOSFET P Trench 100V 23A 4V @ 250uA 117 mΩ @ 13A,10V TO-247 (AC) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 8014
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AUD 1.2288
Multiples of: 1

            Hexfet®      
AGM01P15E


100V 4.3A 270m@10V,4A 1.25W 1.6V@250uA 1PCSPChannel SOT-23-3 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

AGM-Semi 8012
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AUD 0.1036
Multiples of: 5

                   
BSC886N03LSGATMA1


MOSFET TRENCH <= 40V
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Infineon 8010
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AUD 0.4261
Multiples of: 1

           Reel      Optimos
2N7002KQ-13


Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.37W; SOT23
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Diodes Incorporated 8002
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AUD 0.0236
Multiples of: 10

                   
BML6401


12V 4.3A 50mΩ@4.5V,4.3A 1.3W 950mV@250uA 125pF@10V P Channel 830pF@10V +150℃@(Tj) SOT-23 MOSFETs ROHS
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Bourne 8002
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AUD 0.0345
Multiples of: 10

                   
DMC2057UVT-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 7996
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AUD 0.1565
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4 A , 3.3 A20 V42 mOhms , 70 mOhmsN - Channel, P - Channel 400 mV , 1 V- 55 C+ 150 C1.1 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel12 v , 8 V10.5 nC , 6.5 nCEnhancement  
IPD068P03L3GATMA1


Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
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Infineon 7993
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AUD 0.6633
Multiples of: 1

            Optimos P3      
IRFR320PBF


N-Channel 400 V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 7752
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AUD 0.4442
Multiples of: 1

3.1 A400 V1.8 OhmsN - Channel 2 V- 55 C+ 150 C42 WSmd/SmtTO - 252 - 3TubeSi1 Channel10 V20 nCEnhancement  
WSD30L40DN


MOSFET P Trench 30V 40A (Tc) 2.3V @ 250uA 14 mΩ @ 20A,10V DFN 3x3-8 RoHS
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Winsok 6286
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AUD 0.2321
Multiples of: 1

                   
SI2310AHE3-TP


MOSFET N-CHANNEL MOSFET
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Micro Commercial Components (MCC) 0
6 to 16 Weeks Calender.png

AUD 0.1406
Multiples of: 10

                   
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