MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS8018


MOSFET 30V N-Channel PowerTrench MOSFET
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ON Semiconductor 8730
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AUD 1.0567
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30 A30 V1.8 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPOWER 56ReelSi1 Channel20 V   Powertrench
STL8N10LF3


STMicroelectronics MOSFET N-Ch 100 V 25 mOhm 7.8 A STripFET III
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STMicroelectronics 8730
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AUD 1.223
Multiples of: 3000

7.8 A100 V35 mOhmsN - Channel 1 v to 3 V- 55 C+ 175 C70 WSmd/SmtPowerflat - 8ReelSi1 Channel20 V20.5 nCEnhancementAec - Q101Stripfet
NTTFS3A08PZTAG


MOSFET PFET U8FL 20V 14A 6.7MOHM
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ON Semiconductor 8730
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AUD 1.248
Multiples of: 1

14 A20 V6.7 mOhmsp - channel    2.2 Wsmd/smtWDFN - 8Reelsi      
STL13N65M2


STMicroelectronics MOSFET
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STMicroelectronics 8730
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AUD 1.5994
Multiples of: 3000

6.5 A650 V365 mOhmsn - channel 2 V + 150 C52 Wsmd/smtPowerflat - 8Reelsi1 channel25 V17 nCenhancement mdmesh
STB18N60DM2


Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; D2PAK
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STMicroelectronics 8730
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AUD 1.9825
Multiples of: 1000

            Supermesh      
IRFHE4250DTRPBF


MOSFET MOSFET, 25V,60 A Power Block PQFN 6x6
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Infineon 8730
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AUD 3.497
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86 A , 303 A25 v , 25 V4.1 mOhms , 1.35 mOhmsN - Channel16 V1.6 v , 1.6 V  156 w , 156 WSmd/SmtPQFN - 6X6ReelSi 16 V13 nC , 35 nC   
BSD214SN H6327


Infineon Technologies MOSFET
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Infineon 8728
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AUD 0.1278
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1.5 A20 V111 mOhmsP - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6ReelSi1 Channel12 V800 pCEnhancement  
FDMA410NZT


MOSFET Single PT4 Nch 20/8V zener in MLP2x2
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ON Semiconductor 8726
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AUD 0.506
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9.5 A20 V60 mOhmsN - Channel 400 mV- 55 C+ 150 C2.4 WSmd/SmtMICRO - FET - 6ReelSi1 Channel+/- 8 V10 nCEnhancement  
SSM6L09FUTE85LF


Mosfet Array N and P-Channel 30V 400mA, 200mA 300mW Surface Mount US6
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Toshiba 8725
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AUD 0.1733
Multiples of: 5

400 mA30 V4 OhmsN - Channel, P - Channel 1.8 v , - 1.8 V  300 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel     
TSM080N03EPQ56 RLG


MOSFET 30V 55A Single N-Channel Power MOSFET
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Taiwan Semiconductor 8723
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AUD 0.3824
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55 A30 V6.5 mOhmsN - Channel 1 V- 55 C+ 150 C54 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel10 V7.5 nCEnhancement  
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