MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
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MOSFET N-Channel MOSFET 20-200V
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Infineon 9700
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AUD 0.7431
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100 A100 V4.2 mOhmsN - Channel 2 V- 55 C+ 175 C214 WSmd/SmtTO - 263ReelSi1 Channel10 V88 nCEnhancement Optimos
TM100N03AD


30V 100A 6.5m TO-252-3L MOSFETs ROHS
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Tritech-MOS 8215
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AUD 0.1882
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SSM5N16FUTE85LF


MOSFET N-Ch Sm Sig FET 0.1A 20V 2-in-1
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Toshiba 8195
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AUD 0.1423
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100 mA20 V3 OhmsN - Channel 600 mV + 150 C200 mWSmd/SmtSOT - 353 - 5Cut TapeSi2 Channel10 V Enhancement  
ZXMS6006DT8TA


MOSFET 60V Dual N-Ch Mosfet 100mOhm 2.8A 210mJ
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Diodes Incorporated 8195
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AUD 1.5972
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2.8 A60 V75 mOhms , 75 mOhmsN - Channel 700 mV- 40 C+ 125 C2.13 WSmd/SmtSM - 8Cut TapeSi2 Channel5 V Enhancement Intellifet
BSC054N04NSG


MOSFET N Channel 40V 17A 4V @ 27uA 5.4mO @ 50A,10V PG-TDSON-8 RoHS
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Infineon 8194
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AUD 0.5959
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IPD50N08S413ATMA1


MOSFET N-CHANNEL 7580V
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Infineon 8189
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AUD 0.779
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50 A80 V11.2 mOhmsN - Channel 2 V- 55 C+ 175 C72 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V30 nCEnhancementAec - Q101 
KY4407


30V 12A 10mΩ@10V,12A 3.1W P Channel SOP-8 MOSFETs ROHS
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Kang Yang 8188
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AUD 0.1356
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IRFI634GPBF


MOSFET N-Chan 250V 5.6 Amp
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Vishay 8188
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AUD 1.9714
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   N - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3 FPTubeSi      
MMBF170


SOT-23 MOSFETs ROHS
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TECH PUBLIC 8148
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AUD 0.0212
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FDC6305N


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 6964
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AUD 0.1396
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