MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CPH6337-TL-W


MOSFET PCH 1.8V DRIVE SERIE
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ON Semiconductor 8730
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AUD 0.2438
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- 3.5 A- 12 V215 mOhmsP - Channel - 1.4 V + 150 C1.6 WSmd/SmtCPH - 6ReelSi1 Channel+/- 10 V5.6 nCEnhancement  
SI1480DH-T1-GE3


Vishay Semiconductors MOSFET 100V 200mOhm10V 2.3A N-Ch
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Vishay 8730
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AUD 0.2601
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2.6 A100 V200 mOhmsN - Channel20 V1.6 v to 3 V- 55 C+ 150 C2.8 WSmd/SmtSOT - 363 - 6ReelSi1 Channel20 V1.8 nCEnhancement Thunderfet Trenchfet
MCH6336-TL-W


MOSFET PCH 1.8V DRIVE SERIE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 8730
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AUD 0.281
Multiples of: 1

         smd/smtSOT - 363 - 6Cut Tapesi      
SI8483DB-T2-E1


MOSFET -12V 26mOhm@4.5V 16A P-Ch G-III
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Vishay 8730
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AUD 0.2881
Multiples of: 3000

16 A12 V22 mOhmsP - Channel 800 mV- 55 C+ 150 C13 WSmd/SmtMICRO - FOOT 1.5 x 1ReelSi1 Channel10 V65 nCEnhancement Trenchfet
SIA427ADJ-T1-GE3


MOSFET -8V Vds 5V Vgs PowerPAK SC-70
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Vishay 8730
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AUD 0.2905
Multiples of: 3000

- 12 A- 8 V16 mOhmsP - Channel5 V- 800 mV- 55 C+ 150 C19 WSmd/SmtSC - 70 - 6Reel   33 nC   
FDN8601


Fairchild Semiconductor MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 8730
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AUD 0.3016
Multiples of: 3000

2.7 A100 V85.4 mOhmsn channel 3 V  1.5 Wsmd/smtSSOT - 3Cut Tapesi1 channel20 V3 nC  powertrench
SIAA40DJ-T1-GE3


MOSFET 40V Vds 20V Vgs PowerPAK SC-70
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Vishay 8730
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AUD 0.3165
Multiples of: 1

           Cut TapeSi     Trenchfet
SI2323DS-T1-E3


MOSFET 20V 3.7A 0.039Ohm
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Vishay 8730
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AUD 0.3571
Multiples of: 3000

4.7 A20 V39 mOhmsP - Channel 400 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V19 nCEnhancement Trenchfet
FDC3601N


MOSFET Dual N-Ch 100V Spec Power Trench
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ON Semiconductor 8730
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AUD 0.3756
Multiples of: 3000

1 A100 V500 mOhmsN - Channel  - 55 C+ 150 C960 mWSmd/SmtSSOT - 6ReelSi2 Channel20 V Enhancement Powertrench
FDMA1028NZ


Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 8730
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AUD 0.3819
Multiples of: 3000

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