MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMA905P


MOSFET -12V Single P-Chan PowerTrench MOSFET
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ON Semiconductor 72750
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AUD 0.3803
Multiples of: 1

10 A- 12 V16 mOhmsP - Channel8 V - 55 C+ 150 C900 mWSmd/SmtMICRO - FET - 6 2X2ReelSi1 Channel8 V   Powertrench
BSC014N06NS


Infineon Technologies MOSFET N-Ch 60V 100A TDSON-8 OptiMOS
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Infineon 14550
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AUD 1.1526
Multiples of: 1

100 A60 V1.45 mOhmsN - Channel 2.1 V- 55 C+ 150 C156 WSmd/SmtTDSON - 8ReelSi1 Channel10 V89 nCEnhancement Optimos
AO4614B


MOSFET DUAL PN CH 40V 5A SOIC8
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Alpha & Omega 8094
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AUD 0.2863
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           -       
SH8K41GZETB


ROHM Semiconductor MOSFET
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ROHM 8086
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AUD 0.5577
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3.4 A80 V90 mOhms , 90 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOP - 8ReelSi2 Channel20 V6.6 nC , 6.6 nCEnhancement  
DMG1029SV-7


MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA
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Diodes Incorporated 8075
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AUD 0.1102
Multiples of: 5

500 mA , 360 mA60 V1.7 Ohms , 4 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C450 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel10 V0.3 nC , 0.28 nCEnhancement  
BCD80N06


60V 80A 5.3mΩ@10V N Channel TO-252 MOSFETs ROHS
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Shandong Baocheng 8051
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AUD 0.2083
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XPQR3004PB,LXHQ


MOSFETs 40V U-MOS IX-H L-TOGL 0.3MOHM
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Toshiba 7904
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AUD 5.1229
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400 A40 V470 uOhmsN - Channel 3 V + 175 C750 WSMD/SMTL - TOGL - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V295 nCEnhancement  
NTR3C21NZT1G


MOSFET 20 V SANYO T6 NCH IN
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ON Semiconductor 2246
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AUD 0.2092
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3.6 A20 V24 mOhmsN - Channel 450 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V17.8 nCEnhancement  
PSMN3R2-40YLDX


MOSFET 40V N-CHANNEL LOGIC LEVEL
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Nexperia 353
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AUD 0.5369
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BSS123W RFG


MOSFET 100V, 0.16A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 0
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AUD 0.0456
Multiples of: 1

160 mA100 V5 OhmsN - Channel 2.5 V- 55 C+ 150 C298 mWSMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V2 nCEnhancement  
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