MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF820PBF


N-Channel 500 V 2.5A (Tc) 50W (Tc) Through Hole TO-220AB
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Vishay 8313
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AUD 0.5859
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2.5 A500 V3 OhmsN - Channel 2 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V24 nCEnhancement  
DMN66D0LT-7


60V 115mA 200mW 5O@10V,115mA N Channel SOT-523 MOSFETs ROHS
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Diodes Incorporated 8311
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AUD 0.0525
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115 mA60 V6 OhmsN - Channel 2 V- 55 C+ 150 C200 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel20 V Enhancement  
IRLU3410PBF


Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
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Infineon 8302
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AUD 0.637
Multiples of: 1

   N - Channel     Through HoleIPAKTube       
SVT078R0ND


MOSFET TO-252 RoHS
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Youtai 8292
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AUD 0.2432
Multiples of: 5

                   
IRF9321TRPbF


MOSFET P Trench 30V 15A 2.4V @ 50uA 7.2 mΩ @ 15A,10V SOIC-8_150mil RoHS
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Infineon 8290
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AUD 0.4825
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15 A30 V11.2 mOhmsP - Channel    2.5 WSmd/SmtSOIC - 8ReelSi 20 V34 nC   
SI2300A


SOT-23 MOSFETs ROHS
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TECH PUBLIC 8283
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AUD 0.033
Multiples of: 20

                   
IRLML2402TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC 8279
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AUD 0.0625
Multiples of: 10

                   
TP0610T-G


Transistor: P-MOSFET; unipolar; -60V; -0.05A; SOT23-3
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Microchip 8269
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AUD 0.8377
Multiples of: 750

120 mA60 V10 OhmsP - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel10 V Enhancement  
HSS3400A


MOSFET N Channel 30V 5.5A 1.4V @ 250uA 26mO @ 5.9A,10V SOT-23-3 RoHS
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HUASHUO 8266
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AUD 0.0266
Multiples of: 20

                   
SIR426DP-T1-GE3


MOSFET 40V 30A 41.7W 10.5mohm @ 10V
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Vishay 8018
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AUD 0.9617
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
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