MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN31D4UFZ-7B


MOSFETs MOSFET BVDSS: 25V-30V X2-DFN0606-3 T&R 10K
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Diodes Incorporated 8846
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AUD 0.0437
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           Reel , Cut TapeSi      
SI2312


20V 5A null SOT-23 MOSFETs ROHS
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Hottech 8836
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AUD 0.0356
Multiples of: 10

                   
DMN6070SY-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 8832
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AUD 0.1973
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4.1 A60 V70 mOhmsN - Channel 1 V- 55 C+ 150 C2.1 WSmd/SmtSOT - 89 - 3Cut TapeSi1 Channel20 V12.3 nCEnhancement  
BSS8402DW-7-F


MOSFET 60 / -50V 200mW
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Diodes Incorporated 8827
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AUD 0.0686
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115 mA , 130 mA60 v , 50 V7.5 Ohms , 10 OhmsN - Channel, P - Channel 1 v , 800 mV- 55 C+ 150 C200 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel5 V Enhancement  
HYG080N10LS1C2


100V 65A 6.9mΩ@10V,20A 71W 2V@250uA 39pF@25V N Channel 2070pF@25V 30.2nC@10V -55℃~+175℃@(Tj) PDFN5x6-8L MOSFETs ROHS
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HuaYi 8823
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AUD 0.3045
Multiples of: 5

                   
EFC2J004NUZTDG


MOSFET NCH 12V WLCSP6 DUAL
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ON Semiconductor 8813
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AUD 0.2549
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           Cut Tape       
SIR170DP-T1-RE3


MOSFET N-Channel 100 V D-S MOSFET
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Vishay 8801
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AUD 1.3602
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           Cut Tape       
HL2305


12V 3.6A 30m@4.5V,2.6A 1.25W 900mV@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 8790
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AUD 0.0384
Multiples of: 10

                   
BSS8402DWQ-13


Transistor: N/P-MOSFET; unipolar; complementary; 60/-50V; 0.2W
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Diodes Incorporated 8787
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AUD 0.3244
Multiples of: 1

                   
IRF8736TRPBF


MOSFET N Trench 30V 18A 2.35V @ 50uA 4.8 mΩ @ 18A,10V SOP-8_150mil RoHS
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Infineon 8031
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AUD 0.2762
Multiples of: 5

18 A30 V6.8 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V17 nC   
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