MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS123


100V 200mA 3O@10V,2mA 350mW N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

FUXINSEMI 69064
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AUD 0.0157
Multiples of: 50

                   
BUK9Y29-40E,115


N-Channel 40 V 25A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 14198
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AUD 0.2341
Multiples of: 1

25 A40 V25.8 mOhmsN - Channel10 V1.7 V- 55 C+ 175 C37 WSmd/SmtLFPAK56 - 4Reel   5 nC   
SQ2389ES-T1_GE3


MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified
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Vishay 9234
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AUD 0.2912
Multiples of: 5

4.1 A40 V94 mOhmsP - Channel 1.5 V- 55 C+ 175 C3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V8.2 nCEnhancementAec - Q101Trenchfet
FDZ1323NZ


MOSFET 20V Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET
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ON Semiconductor 8551
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AUD 0.6218
Multiples of: 1

10 A20 V13 mOhmsn - channel12 V0.9 V- 55 C+ 150 C2 Wsmd/smtWLCSP - 6 1.3X2.3Reelsi1 channel12 V17 nC  powertrench
BSS126 H6906


MOSFET N-KANAL SMALL SIGNAL MOS
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Infineon 8549
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AUD 0.4527
Multiples of: 1

21 mA600 V500 OhmsN - Channel 2.7 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT23 - 3ReelSi1 Channel10 V1.4 nCDepletion  
AS2302


MOSFET N Trench 20V 3.5A 1.5V @ 250uA 60 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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AnBon 7798
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AUD 0.0204
Multiples of: 20

                   
IRF1404ZSTRLPBF


Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
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Infineon 7760
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AUD 1.4752
Multiples of: 800

190 A40 V2.7 mOhmsN - Channel    220 WSmd/SmtD2PAKReelSi1 Channel20 V100 nC   
HSK5P10


100V 5A 1.7W 280m@10V,5A 2V@250uA 1 Piece P-Channel SOT-89 MOSFETs ROHS
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HUASHUO 7027
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AUD 0.1433
Multiples of: 5

                   
NX3020NAKW.115


Transistor: N-MOSFET; unipolar; 30V; 0.11A; 300mW; SOT323
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Nexperia 6397
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AUD 0.0966
Multiples of: 1

                   
FDN8601


Fairchild Semiconductor MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 2716
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AUD 0.2974
Multiples of: 1

2.7 A100 V85.4 mOhmsn channel 3 V  1.5 Wsmd/smtSSOT - 3Cut Tapesi1 channel20 V3 nC  powertrench
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