MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMP6A17GTA


P-Channel 60 V 3A (Ta) 2W (Ta) Surface Mount SOT-223-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 8730
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AUD 0.4011
Multiples of: 1000

   P - channel  - 55 C+ 150 C Smd/smtSOT - 223Reel       
NX3008NBKV,115


MOSFET 30V 400 MA DUAL N-CH TRENCH MOSFET
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Nexperia 8716
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AUD 0.0992
Multiples of: 1

400 mA30 V1.4 OhmsN - Channel 600 mV- 55 C+ 150 C500 mWSmd/SmtSOT - 666ReelSi2 Channel4.5 V0.52 nCEnhancement  
CRTT029N06N


60V 220A 2.3O@10V,80A 254W N Channel TO-220 MOSFETs ROHS
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CRMICRO 8491
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AUD 1.1989
Multiples of: 1

                   
DMC21D1UDA-7B


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 8488
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AUD 0.1565
Multiples of: 1

455 mA , 328 mA20 V500 mOhms , 1.2 OhmsN - Channel, P - Channel 400 mV , 1 V- 55 C+ 150 C300 mWSmd/SmtDFN0806 - 6Cut TapeSi2 Channel8 V410 pC , 400 pCEnhancement  
2SK3018W


30V 250mA 1.5@10V 300mW 1.6V@250uA SOT-323 MOSFETs ROHS
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GOODWORK 8342
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AUD 0.015
Multiples of: 50

                   
DMN6140L


SOT23 MOSFETs ROHS
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TECH PUBLIC 8264
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AUD 0.056
Multiples of: 10

                   
WNM2046


DFN-3L(1x0.6) MOSFETs ROHS
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TECH PUBLIC 8264
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AUD 0.0246
Multiples of: 20

                   
HSCB1216


MOSFET P Channel 12V 16A 1.2V @ 250uA 15mΩ @ 8A,4.5V DFN2x2-6L RoHS
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HUASHUO 7852
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AUD 0.0848
Multiples of: 5

                   
FDMS86520L


MOSFET 60V N-Channel PowerTrench MOSFET
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ON Semiconductor 7091
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AUD 2.2
Multiples of: 1

13.5 A60 V8.2 mOhmsN - Channel 1 V- 55 C+ 150 C69 WSMD/SMTPOWER - 56 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V63 nCEnhancement PowerTrench
BSC014N06NSATMA1


Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
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Infineon 3583
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AUD 2.5771
Multiples of: 1

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