MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF1405STRRPBF


International Rectifier MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC
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Infineon 8536
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AUD 2.0621
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131 A55 V5.3 mOhmsN - Channel20 V - 55 C+ 175 C200 WSmd/SmtD - PAK - 3ReelSi1 Channel20 V170 nCEnhancement  
IRFR420PBF-BE3


MOSFETs TO252 500V 2.4A N-CH MOSFET
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Vishay 8519
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AUD 1.1236
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2.4 A500 V3 OhmsN - Channel 2 V- 55 C+ 150 C42 WSMD/SMTDPAK - 3 (TO - 252 - 3)BulkSi1 Channel- 20 V , 20 V19 nCEnhancement  
PMV65XPER


SOT-23 MOSFETs ROHS
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TECH PUBLIC 8516
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AUD 0.0413
Multiples of: 10

                   
NDDL01N60Z-1G


ON Semiconductor MOSFET NFET DPAK 600V 1.5A 8.50H
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ON Semiconductor 8511
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AUD 0.288
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800 mA600 V12.2 OhmsN - Channel 3 V- 55 C+ 150 C26 WThrough HoleTO - 251 - 3TubeSi1 Channel30 V4.9 nCEnhancement  
BSC026N04LSATMA1


Transistor: N-MOSFET; unipolar; 40V; 100A; 63W; PG-TDSON-8
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Infineon 8509
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AUD 0.5993
Multiples of: 1

            Optimos      
NX138AKVL


MOSFETs NX138AK/SOT23/TO-236AB
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Nexperia 8471
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AUD 0.067
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            Trench      
STP4925A


SOP-8 MOSFETs ROHS
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Youtai 8443
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AUD 0.1404
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CMLDM7003TG TR PBFREE


MOSFET Dual N-Ch Enh FET 50Vds 50Vdg 12Vgs
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Central Semiconductor 8417
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AUD 0.2154
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           Cut Tape       
BSC123N08NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 7024
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AUD 0.8486
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55 A80 V10.3 mOhmsN - Channel 2 V- 55 C+ 150 C66 WSmd/SmtTDSONReelSi1 Channel20 V25 nCEnhancement Optimos
SVF4N65RDTR


650V 4A 2.3O@10V,2A 77W N Channel TO-252 MOSFETs ROHS
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Silan 5601
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AUD 0.1713
Multiples of: 5

                   
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