MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF6644TRPBF


N-Channel 100 V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
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Infineon 12778
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AUD 1.5201
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10.3 A100 V10.3 mOhmsN - Channel20 V4.8 V- 40 C+ 150 C89 WSmd/SmtDirectfet - 3ReelSi1 Channel20 V35 nCEnhancement Directfet
DMN62D0LFB-7B


MOSFETs 2N7002 Family X2-DFN1006-3 T&R 10K
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Diodes Incorporated 8424
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AUD 0.1045
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SSM3K62TU,LXHF


MOSFET SMOS Low RON Nch Vds s:20V ID:0.8A SOT-2
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Toshiba 8414
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AUD 0.175
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800 mA20 V57 mOhmsN - Channel 1 V-+ 150 C1 WSMD/SMTUFM - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V2 nCEnhancementAEC - Q101 
SSM3K357R,LF


MOSFET LowON Res MOSFET ID=.65A VDSS=60V
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Toshiba 8400
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AUD 0.2055
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650 mA60 V1.8 OhmsN - Channel 1.3 V + 150 C1.5 WSmd/SmtSOT - 23F - 3Cut TapeSi1 Channel12 V1.5 nCEnhancement  
IQE006NE2LM5SCATMA1


MOSFET
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Infineon 8385
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AUD 1.6029
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47 A25 V580 uOhmsN - Channel 2 V- 55 C+ 150 C2.1 WSMD/SMTWHSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V82 nCEnhancement  
BSC032N04LSATMA1


Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
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Infineon 8361
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AUD 0.5697
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            Optimos      
AO3407A


SOT-23 MOSFETs ROHS
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TECH PUBLIC 8002
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AUD 0.0528
Multiples of: 10

                   
SI3134KL3A-TP


MOSFET N-Channel Mosfets
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Micro Commercial Components (MCC) 6421
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AUD 0.11
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LP3443LT1G


null 4.7A P Channel SOT-23E MOSFETs ROHS
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Leshan 5965
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AUD 0.0494
Multiples of: 10

                   
2SK3018


SOT-23 MOSFETs ROHS
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Bourne 3918
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AUD 0.0208
Multiples of: 20

                   
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