MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2056U-13


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 8785
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AUD 0.1281
Multiples of: 5

                   
DMN62D0UT-7


MOSFET N-Ch Enh Mode Fet 60V 20Vgss 0.47W
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Diodes Incorporated 8771
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AUD 0.0733
Multiples of: 1

   N - Channel     Smd/SmtSOT - 23 - 3Cut TapeSi1 Channel     
IXFA10N80P


MOSFET 10 Amps 800V 1.1 Rds
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IXYS 8767
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AUD 3.6667
Multiples of: 1

10 A800 V1.1 Ohmsn - channel  - 55 C+ 150 C300 Wsmd/smtTO - 263 - 3Tubesi1 channel30 V enhancement hiperfet
12P10L-TN3-R


MOSFET P Trench 100V 9.4A 4V @ 250uA 290 mΩ @ 4.7A,10V TO-252-2 (DPAK) RoHS
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Unisonic 8756
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AUD 0.2083
Multiples of: 5

                   
WSP4805


MOSFET 2 P Channel (Dual) 30V 8A (Tc) 2V @ 250uA 19 mΩ @ 8A,10V SOP-8_150mil RoHS
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Winsok 8747
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AUD 0.3163
Multiples of: 1

                   
ES3139KW


20V 500mA 180mW 580m@4.5V,0.5A 620mV@250uA 1PCSPChannel SOT-523 MOSFETs ROHS
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ElecSuper 8744
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AUD 0.0206
Multiples of: 20

                   
AON6354


MOSFET N Trench 30V 83A (Tc) 2.2V @ 250uA 3.3 mΩ @ 20A,10V DFN5x6 RoHS
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Alpha & Omega 8715
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AUD 0.2261
Multiples of: 5

                   
SI2324A-TP


MOSFET N-Ch Enh FET 100Vds 2A 8A 20Vgs 22pF
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Micro Commercial Components (MCC) 8470
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AUD 0.11
Multiples of: 1

2 A100 V280 mOhmsN - Channel 10 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.8 nCEnhancement  
IPD80R2K8CEATMA1


MOSFET N-Ch 800V 1.9A DPAK-2
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Infineon 2425
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AUD 0.4004
Multiples of: 2500

1.9 A800 V2.8 OhmsN - Channel 3 V- 55 C+ 150 C42 WSmd/SmtTO - 252 - 3ReelSi1 Channel30 V12 nC  Coolmos
PSMN1R0-30YLC,115


NXP Semiconductors MOSFET N-CH 30 V 1.15 mOhms LOGIC LEVEL MOSFET
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Nexperia 0
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AUD 1.3008
Multiples of: 1

100 A30 V1.15 mOhmsN - Channel20 V1.41 V- 55 C+ 175 C137 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V103.5 nCEnhancement  
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