MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS314PE H6327


Infineon Technologies MOSFET P-Ch -30V -1.5A SOT-23-3
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Infineon 8342
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AUD 0.0903
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1.5 A30 V107 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V- 2.9 nCEnhancementAec - Q101 
FDD8780


MOSFET 25V N-Channel PwrTrench MOSFET
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ON Semiconductor 8338
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AUD 0.6172
Multiples of: 1

   n - channel  - 55 C+ 175 C smd/smtTO - 252Reel       
FDS6912A-TP


SOP-8 MOSFETs ROHS
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TECH PUBLIC 8332
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AUD 0.2376
Multiples of: 5

                   
IRF1405STRLPBF


Transistor: N-MOSFET; unipolar; 55V; 131A; 200W; D2PAK
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Infineon 8330
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AUD 1.7239
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131 A55 V5.3 mOhmsN - Channel 4 V- 55 C+ 175 C200 WSmd/SmtD2PAKReelSi1 Channel20 V170 nC   
IRLML2402


SOT-23 MOSFETs ROHS
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Youtai 8328
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AUD 0.0546
Multiples of: 10

                   
IRFZ48NSTRLPBF


Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
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Infineon 8323
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AUD 0.9572
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64 A55 V14 mOhmsN - Channel 4 V- 55 C+ 175 C3.8 WSmd/SmtD2PAKReelSi1 Channel20 V81 nC   
IRF6645TRPBF


International Rectifier MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ
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Infineon 8321
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AUD 0.8078
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5.7 A100 V28 mOhmsN - Channel  - 40 C+ 150 C42 WSmd/SmtDirectfet - 3ReelSi1 Channel20 V14 nCEnhancement Directfet
FSS2300M 2300


20V 4.5A 32mΩ@4.5V,5A 1200mW 1.2V@250uA N Channel 650pF@10V +150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN 8320
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AUD 0.0247
Multiples of: 20

                   
IRF9620STRLPBF


MOSFET P-Chan 200V 3.5 Amp
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Vishay 8222
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AUD 1.2806
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   P - Channel  - 55 C+ 150 C Smd/SmtD2PAKReelSi      
FDMS0308AS


Fairchild Semiconductor MOSFET
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ON Semiconductor 4277
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AUD 0.5878
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24 A30 V2.2 mOhmsN - Channel 1.7 V- 55 C+ 150 C2.5 WSmd/SmtPOWER56 - 8ReelSi +/- 20 V34 nCEnhancement Powertrench Syncfet
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