MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSD235CH6327XTSA1


Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
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Infineon 8730
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AUD 0.1012
Multiples of: 3000

            Optimos 2      
FDMS7692


MOSFET PT7 30/20V Nch PowerTrench
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ON Semiconductor 8730
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AUD 0.1061
Multiples of: 3000

14 A30 V6.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C27 WSmd/SmtPOWER - 56ReelSi1 Channel20 V15 nCEnhancement Powertrench
SI1317DL-T1-GE3


MOSFET 20V 1.4A P-Channel
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Vishay 8730
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AUD 0.1302
Multiples of: 3000

1.4 A20 V0.27 OhmsP - Channel8 V800 mV- 50 C+ 150 C500 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel- 4.5 V4.3 nCEnhancement Trenchfet
BSS127SSN-7


MOSFET BSS Family,SC59 Family,SC59,3K
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Diodes Incorporated 8730
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AUD 0.1317
Multiples of: 3000

50 mA600 V160 OhmsN - Channel  - 55 C+ 150 C610 mWSmd/SmtSC - 59ReelSi1 Channel20 V1.08 nCEnhancement  
HSBB0012


MOSFET N Channel 100V 20A 2.5V @ 250uA 105mΩ @ 5A,10V PRPAK3*3 RoHS
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HUASHUO 8730
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AUD 0.1416
Multiples of: 5

                   
MMBF2201NT1G


N-Channel 20 V 300mA (Ta) 150mW (Ta) Surface Mount SC-70-3 (SOT323)
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ON Semiconductor 8730
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AUD 0.142
Multiples of: 3000

300 mA20 V1 OhmsN - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtSC - 70 - 3ReelSi1 Channel10 V1.4 nCEnhancement  
SSM3J134TU,LF


MOSFET LowON Res MOSFET ID=-3.2A VDSS=-20V
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Toshiba 8730
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AUD 0.1519
Multiples of: 1

3.2 A20 V93 mOhmsP - Channel 1 V + 150 C500 mWSmd/SmtUFM - 3Cut TapeSi1 Channel8 V4.7 nCEnhancement  
BSS126H6327XTSA2


Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
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Infineon 8730
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AUD 0.1573
Multiples of: 3000

            Sipmos      
MGSF2N02ELT1G


MOSFET NFET SOT23 20V 2.8A 85mOhm
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ON Semiconductor 8730
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AUD 0.1673
Multiples of: 3000

2.8 A20 V85 mOhmsN - Channel 500 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V3.5 nCEnhancement  
DMN2075UDW-7


MOSFET MOSFET BVDSS: 8V-24V SOT363,3K
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Diodes Incorporated 8730
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AUD 0.1712
Multiples of: 3000

2.8 A20 V48 mOhmsN - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT363 - 6ReelSi1 Channel8 V7 nCEnhancement  
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