MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SN7002WH6433XTMA1


MOSFET SMALL SIGNAL MOSFETS
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Infineon 8286
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AUD 0.0713
Multiples of: 1

   P - Channel     Smd/SmtSOT - 323 - 3Cut TapeSi1 Channel     
NDBA100N10BT4H


MOSFET NCH 100A 100V TO-263
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ON Semiconductor 8264
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AUD 1.5339
Multiples of: 1

100 A100 V5.7 mOhmsn - channel 2 V + 175 C110 Wsmd/smtTO - 263 - 3Cut Tapesi1 channel20 V35 nCenhancement  
DMT6018LDR-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 8254
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AUD 0.6692
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8.8 A60 V13 mOhmsN - Channel, Npn 1 V- 55 C+ 150 C1.9 W V - DFN3030 - 8 Si2 Channel10 V13.9 nCEnhancement  
TP0610T-G


Transistor: P-MOSFET; unipolar; -60V; -0.05A; SOT23-3
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Microchip 7784
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AUD 0.6594
Multiples of: 1

120 mA60 V10 OhmsP - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel10 V Enhancement  
HSS3402A


MOSFET N Channel 30V 5.3A 1.4V @ 250uA 28mO @ 5.9A,10V SOT-23-3 RoHS
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HUASHUO 7178
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AUD 0.0145
Multiples of: 50

                   
STP11NM80


MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
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STMicroelectronics 6980
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AUD 3.3757
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BUK9Y72-80E,115


MOSFET N-channel 80 V 78 mo FET
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Nexperia 6542
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AUD 0.3464
Multiples of: 1

15 A80 V65 mOhmsN - Channel15 V1.7 V- 55 C+ 175 C45 WSmd/SmtLFPAK - 4ReelSi1 Channel15 V7.9 nCEnhancement  
NCE3400X


SOT-23 MOSFETs ROHS
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NCE Power 6513
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AUD 0.0467
Multiples of: 5

                   
ZXMN10A08DN8TA


Diodes Incorporated MOSFET 100V 2.1A N-Channel Enhancement MOSFET
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Diodes Incorporated 485
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AUD 0.5863
Multiples of: 500

2.1 A100 V250 mOhmsN - Channel20 V - 55 C+ 150 C1.8 WSmd/SmtSOIC - 8ReelSi2 Channel20 V Enhancement  
SI3134K-TP


MOSFET N-Channel MOSFET, SOT-723 package
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Micro Commercial Components (MCC) 0
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AUD 0.12
Multiples of: 1

750 mA20 V380 mOhmsN - Channel 350 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 723 - 3Cut TapeSi1 Channel12 V Enhancement  
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