MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
3400Q


30V 7A 20m 1PCSNChannel SOT-89-3L MOSFETs ROHS
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HL 18624
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AUD 0.032
Multiples of: 20

                   
FDC642P


MOSFET SSOT-6 P-CH -20V
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ON Semiconductor 8148
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AUD 0.1588
Multiples of: 1

4 A20 V65 mOhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6ReelSi1 Channel8 V Enhancement Powertrench
2SK3492-TL-E


GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
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ON Semiconductor 8148
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AUD 0.8
Multiples of: 1

                   
FDMS86368_F085


MOSFET N-Channel PowerTrench MOSFET 80V, 80A, 4.5 mO
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ON Semiconductor 8130
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AUD 1.3644
Multiples of: 1

80 A80 V9 mOhmsn - channel 2 V- 55 C+ 175 C214 Wsmd/smtPOWER - 56 - 8Reelsi1 channel+/- 20 V57 nCenhancement powertrench
IRF9620STRLPBF


MOSFET P-Chan 200V 3.5 Amp
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Vishay 8123
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AUD 1.5893
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3.5 A200 V1.5 OhmsP - Channel 4 V- 55 C+ 150 C3 WSMD/SMTTO - 263 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V22 nCEnhancement  
IAUC100N04S6L020ATMA1


MOSFET MOSFET_20V 40V
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Infineon 8120
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AUD 0.7142
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           Cut Tape       
EM6K7T2R


Mosfet Array 2 N-Channel (Dual) 20V 200mA 150mW Surface Mount EMT6
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ROHM 8109
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AUD 0.1005
Multiples of: 5

200 mA20 V800 mOhmsN - Channel8 V - 55 C+ 150 C150 mWSmd/SmtEMT - 6Reel    Enhancement  
IRFP9140NPBF


MOSFET P Trench 100V 23A 4V @ 250uA 117 mΩ @ 13A,10V TO-247 (AC) RoHS
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Infineon 8014
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AUD 1.2288
Multiples of: 1

            Hexfet®      
SQ2309ES-T1_GE3


MOSFET P Trench 60V 1.7A (Tc) 2.5V @ 250uA 336 mΩ @ 3.8A,10V SOT-23 RoHS
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Vishay 7716
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AUD 0.4003
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- 1.7 A- 60 V500 mOhmsP - Channel   + 175 C600 mW  ReelSi +/- 20 V   Trenchfet
Hot IRF7342TRPBF


MOSFET 2 P Channel (Dual) 55V 3.4A 1V @ 250uA 105 mΩ @ 3.4A,10V SOIC-8_150mil RoHS
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Infineon 5402
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AUD 0.5424
Multiples of: 1

3.4 A55 V105 mOhmsP - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V26 nC   
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