MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RD3P130SPFRATL


MOSFET Pch -100V Vdss -13A TO-252(DPAK); TO-252
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ROHM 8929
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AUD 1.3079
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13 A100 V200 mOhmsP - Channel - 2.5 V- 55 C+ 150 C20 WSmd/SmtTO - 252 - 3Cut Tape 1 Channel20 V40 nCEnhancement  
BSS806NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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Infineon 8912
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AUD 0.0978
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2.3 A20 V41 mOhmsN - Channel 300 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel8 V1.7 nCEnhancementAec - Q101 
IQE006NE2LM5CGSCATMA1


MOSFET
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Infineon 8908
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AUD 1.5417
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47 A25 V580 uOhmsN - Channel 2 V- 55 C+ 150 C2.1 WSMD/SMTWHTFN - 9Reel , Cut TapeSi1 Channel- 16 V , + 16 V82 nCEnhancement  
PJQ1906_R1_00201


MOSFETs 20V N-Channel Enhancement Mode MOSFET
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Panjit 8904
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AUD 0.0849
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300 mA30 V1.2 OhmsN - Channel 1 V- 55 C+ 150 C700 mWSMD/SMTDFN - 1006 - 3Reel , Cut TapeSi1 Channel- 10 V , + 10 V900 pCEnhancement  
IPA057N08N3 G


MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3
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Infineon 8902
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AUD 1.8754
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60 A80 V5.7 mOhmsN - Channel  - 55 C+ 175 C39 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V18 nCEnhancement Optimos
STW45NM50


Transistor: N-MOSFET; unipolar; 500V; 28.4A; 390W; TO247
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STMicroelectronics 8899
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AUD 10.1786
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   N Channel               
90N03


TO-252 MOSFETs ROHS
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HL 8885
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AUD 0.0791
Multiples of: 5

                   
TP2104K1


Trans MOSFET P-CH Si 40V 0.16A 3-Pin SOT-23
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Microchip 8876
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AUD 1.1721
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160 mA40 V6 OhmsP - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3 Si1 Channel20 V Enhancement  
DMN62D0UW-13


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated 8870
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AUD 0.0611
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   N - Channel     Smd/SmtSOT - 323 - 3Cut TapeSi1 Channel     
BSC093N15NS5ATMA1


MOSFET MV POWER MOS
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Infineon 8143
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AUD 2.4095
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87 A150 V7.9 mOhmsN - Channel 3 V- 55 C+ 150 C139 WSmd/SmtTDSON - 8ReelSi1 Channel+/- 20 V40.7 nCEnhancement Optimos
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