MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFU9024PBF


P-Channel 60 V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
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Vishay 775
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AUD 0.5913
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8.8 A60 V280 mOhmsP - Channel 2 V- 55 C+ 150 C42 WThrough HoleTO - 251 - 3TubeSi1 Channel10 V19 nCEnhancement  
SI4850BDY-T1-GE3


MOSFET 60V Vds 20V Vgs SO-8
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Vishay 775
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AUD 0.7503
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11.3 A60 V19.5 mOhmsN - Channel 2.8 V- 55 C+ 150 C4.5 WSmd/SmtSO - 8Cut TapeSi1 Channel2.8 V11.1 nC   
SPD18P06PGBTMA1


MOSFET P-Ch -60V -18.6A DPAK-2
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Infineon 775
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AUD 0.8114
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18.6 A60 V100 mOhmsP - Channel 4 V- 55 C+ 175 C80 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V33 nCEnhancement  
IRF830APBF


MOSFET N Trench 500V 5A 4.5V @ 250uA 1.4 Ω @ 3A,10V TO-220 (TO-220-3) RoHS
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Vishay 775
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AUD 0.9904
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   N - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3Tube       
STFI12N60M2


MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in I2PAKFP package
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STMicroelectronics 775
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AUD 1.1887
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9 A600 V450 mOhmsN - Channel 4 V- 55 C+ 150 C25 WThrough HoleTO - 262 - 3 Si1 Channel25 V16 nCEnhancement  
IRF634STRRPBF


MOSFET N-Chan 250V 8.1 Amp
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Vishay 775
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AUD 1.7403
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8.1 A250 V450 mOhmsN - Channel  - 55 C+ 150 C3.1 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V Enhancement  
IPP045N10N3GXKSA1


Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
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Infineon 775
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AUD 2.1856
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            Optimos 3      
NTP110N65S3HF


MOSFET SUPERFET3 650V FRFET110M
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ON Semiconductor 775
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AUD 5.3785
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30 A650 V110 mOhmsN - Channel 3 V- 55 C+ 150 C240 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V62 nCEnhancement SuperFET III
PSMN6R0-30YLDX


MOSFET N-channel 30 V 6 mo FET
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Nexperia 774
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AUD 0.2528
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66 A30 V6.7 mOhmsN - Channel20 V1.83 V- 55 C+ 175 C47 WSmd/SmtLFPAK56 - 4ReelSi1 Channel20 V13.7 nCEnhancement  
RQ3E130BNTB


Trans MOSFET N-CH 30V 13A 8-Pin HSMT EP T/R
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ROHM 774
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AUD 0.2775
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13 A30 V4.4 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtH SMT - 8Tape And ReelSi1 Channel20 V36 nCEnhancement  
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