MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDB20N50F


MOSFET N-Channel UniFETTM FRFET MOSFET 500V,
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ON Semiconductor 4060
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AUD 3.2015
Multiples of: 1

20 A500 V260 mOhmsn - channel30 V5 V- 55 C+ 150 C250 Wsmd/smtD2PAK - 3Reelsi1 channel30 V50 nCenhancement unifet
FDP047AN08A0


MOSFET 75V N-Ch PowerTrench
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ON Semiconductor 1164
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AUD 3.055
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80 A75 V4 mOhmsN - Channel  - 55 C+ 175 C310 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement  
SUM40010EL-GE3


MOSFET 40V Vds 20V Vgs D2PAK (TO-263)
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Vishay 776
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AUD 1.9871
Multiples of: 800

         Smd/SmtTO - 263 - 3TubeSi     Trenchfet
WMM28N60C4


Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
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Wayon 776
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AUD 2.4657
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            WMOS C4      
FDP032N08B-F102


MOSFET N Trench 80V 120A 4.5V @ 250A 3.3 mΩ @ 100A,10V TO-220 (TO-220-3) RoHS
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ON Semiconductor 776
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AUD 2.5342
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RJ1G04BBGTL1


MOSFETs Nch 40V 130A, TO-263AB, Power MOSFET
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ROHM 776
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AUD 2.6104
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130 A40 V3.1 mOhmsN - Channel 2.5 V- 55 C+ 150 C89 WSMD/SMTTO - 263AB - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V56 nCEnhancement  
SUM90N03-2M2P-E3


N-Channel 30 V 90A (Tc) 3.75W (Ta), 250W (Tc) Surface Mount TO-263 (D²Pak)
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Vishay 776
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AUD 2.7418
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90 A30 V1.8 mOhmsN - Channel 1.5 V- 55 C+ 175 C250 WSmd/SmtTO - 263ReelSi1 Channel20 V257 nCEnhancement Trenchfet
IRL2910STRRPBF


MOSFET PLANAR MOSFET - PACKAGE
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Infineon 776
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AUD 2.9851
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55 A100 V26 mOhmsN - Channel  - 55 C+ 175 C3.8 WSmd/SmtTO - 252 - 3ReelSi1 Channel16 V93.3 nCEnhancement  
SIHB22N60ET1-GE3


MOSFET 600V Vds E Series D2PAK TO-263
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Vishay 776
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AUD 3.0336
Multiples of: 800

21 A650 V180 mOhmsN - Channel 4 V- 55 C+ 150 C227 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel 57 nC   
IRF644STRRPBF


Vishay Semiconductors MOSFET N-Chan 250V 14 Amp
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Vishay 776
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AUD 3.0785
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14 A250 V280 mOhmsN - Channel  - 55 C+ 150 C3.1 WSmd/SmtD2PAK - 3ReelSi1 Channel20 V Enhancement  
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