MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF840ASTRLPBF


N-Channel 500 V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 10864
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AUD 1.6791
Multiples of: 800

   N - Channel  - 55 C+ 150 C Smd/SmtD2PAKReelSi      
IRFBC40STRLPBF


N-Channel 600 V 6.2A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 776
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AUD 1.8284
Multiples of: 800

6.2 A600 V1.2 OhmsN - Channel20 V - 55 C+ 150 C3.1 WSmd/SmtD2PAK - 3ReelSi   Enhancement  
IPB049N08N5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 320A; 125W; PG-TO263-3
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Infineon 776
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AUD 1.8925
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            Optimos 5      
IRFS7434TRLPBF


N-Channel 40 V 195A (Tc) 294W (Tc) Surface Mount D2PAK
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Infineon 776
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AUD 1.9114
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320 A40 V1.6 mOhmsN - Channel20 V3 V  294 WSmd/SmtD2PAK - 3ReelSi1 Channel20 V216 nC  Strongirfet
SQM40P10-40L_GE3


MOSFET P-Channel 100V AEC-Q101 Qualified
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Vishay 776
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AUD 1.9961
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40 A- 100 V33 mOhmsP - Channel 2.5 V- 55 C+ 175 C150 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V134 nCEnhancementAec - Q101Trenchfet
IRF840ALPBF


MOSFET RECOMMENDED ALT 844-IRF840ALPBF
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Vishay 776
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AUD 2.022
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         through holeTO - 262 - 3Tubesi      
AOB282L


Transistor: N-MOSFET; unipolar; 80V; 82A; 136W; TO263
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Alpha & Omega 776
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AUD 2.0896
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FDP150N10


MOSFET 100V N-Channel PowerTrench
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ON Semiconductor 776
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AUD 2.1507
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57 A100 V12 mOhmsN - Channel  - 55 C+ 150 C110 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Powertrench
BUK7631-100E,118


NXP Semiconductors MOSFET
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Nexperia 776
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AUD 2.3787
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34 A100 V84 mOhmsn - channel 4.5 V  96 Wsmd/smtTO - 263 - 3Reelsi1 channel 29.4 nC   
IRF135S203


MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg
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Infineon 391
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AUD 2.5119
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129 A135 V8.4 mOhmsN - Channel 2 V- 55 C+ 175 C441 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V180 nCEnhancement Strongirfet
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