MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
YFW7N65AF


650V 7A 1.2Ω@10V,3.5A 48W 2V@250uA null TO-220F MOSFETs ROHS
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YFW Electronics 776
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AUD 0.6335
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FQPF5P20


MOSFET 200V P-Channel QFET
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ON Semiconductor 776
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AUD 0.7256
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3.4 A200 V1.4 OhmsP - Channel  - 55 C+ 150 C38 WThrough HoleTO - 220FTubeSi1 Channel30 V Enhancement Qfet
ASB80R750E


800V 8.5A 150W 620m 3.5V 1 N-Channel TO-263 MOSFETs ROHS
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ANHI 776
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AUD 0.9251
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PTY12HN06


TO-263 MOSFETs ROHS
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PUOLOP 776
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AUD 0.946
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IPD60N10S4L12ATMA1


Infineon Technologies MOSFET N-Ch 100V 60A DPAK-2
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Infineon 776
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AUD 0.9588
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60 A100 V9.8 mOhmsN - Channel 1.6 V- 55 C+ 175 C94 WSmd/SmtPG - TO 252 - 3 - 313Reel-1 Channel+/- 16 V38 nCEnhancementAec - Q101 
IRLZ44ZSTRLPBF


Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK
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Infineon 776
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AUD 1.078
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   N - Channel     Smd/SmtD2PAKReel       
IRF9Z34STRLPBF


P-Channel 60 V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 776
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AUD 1.0821
Multiples of: 800

   P - Channel  - 55 C+ 175 C Smd/SmtTO - 263ReelSi      
DMN3012LEG-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 776
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AUD 1.1462
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20 A30 V12 mOhmsN - Channel 1 V- 55 C+ 150 C2.2 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel10 V6.1 nCEnhancement  
IRFS4620TRLPBF


MOSFET MOSFT 200V 24A 78mOhm 25nC Qg
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Infineon 776
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AUD 1.2034
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24 A200 V77.5 mOhmsN - Channel  - 55 C+ 175 C144 WSmd/SmtD2PAKReelSi1 Channel20 V25 nCEnhancement  
SPD18P06P G


MOSFET P-CH 60V 18.6A
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Infineon 763
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AUD 0.9966
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18.6 A60 V130 mOhmsP - Channel 4 V- 55 C+ 175 C80 WSmd/SmtTO - 252ReelSi1 Channel10 V22 nCEnhancement Sipmos
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