MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTP120P065T


MOSFET -120 Amps -65V 0.01 Rds
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IXYS 1095
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AUD 6.3537
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120 A65 V10 mOhmsP - Channel  - 55 C+ 150 C298 WThrough HoleTO - 220 - 3TubeSi1 Channel15 V185 nCEnhancement  
DMC4029SSDQ-13


MOSFET Comp ENH FET 40VDs 20Vgs 1.3W
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Diodes Incorporated 783
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AUD 0.9519
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7 A40 v , - 40 V20 mOhms , 40 mOhmsN And P - Channel20 V3 V- 55 C+ 150 C1.8 WSmd/SmtSO - 8ReelSi2 Channel20 V19.1 nC , 21.5 nCEnhancementAec - Q101 
IPP60R099C7XKSA1


Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
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Infineon 783
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AUD 4.3015
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            Coolmos C7      
AIMDQ75R040M1HXUMA1


MOSFETs Y
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Infineon 782
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AUD 9.391
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           Reel , Cut TapeSi     CoolSiC
NTS4173PT1G


ON Semiconductor MOSFET PFET SC70 30V TR
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ON Semiconductor 781
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AUD 0.1674
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- 1.3 A- 30 V165 mOhmsP - Channel12 V - 55 C+ 150 C350 mWSmd/SmtSC - 70 - 3Reel    Enhancement  
IRLMS6802TRPBF


MOSFET P Trench 20V 5.6A 1.2V @ 250uA 50 mΩ @ 5.1A,4.5V SOT-23-6 RoHS
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Infineon 781
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AUD 0.2561
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            Hexfet®      
RRQ030P03HZGTR


P-Channel 30V 3A (Ta) 950mW (Ta) Surface Mount TSMT6 (SC-95)
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ROHM 781
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AUD 0.3197
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3 A30 V75 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 457T - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V5.2 nCEnhancementAEC - Q101 
FDP032N08B_F102


MOSFET N-Channel PowerTrench MOSFET 80V, 211A, 3.3m
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ON Semiconductor 772
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AUD 4.3082
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211 A80 V2.85 mOhmsN - Channel20 V4.5 V- 55 C+ 175 C263 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V111 nCEnhancement  
FCPF1300N80Z


Transistor: N-MOSFET; unipolar; 800V; 2.5A; 24W; TO220FP
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ON Semiconductor 726
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AUD 2.2556
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            superfet®      
Si2333CDS-T1-GE3


P-Channel 12 V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 587
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AUD 0.3427
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7.1 A12 V35 mOhmsP - Channel 400 mV- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V15 nCEnhancement Trenchfet
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