MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTS4001NT1G


null 300mA 250mW 1.45@10V,0.5A 1.5V@250uA SOT-323 MOSFETs ROHS
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TECH PUBLIC 3686
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AUD 0.0215
Multiples of: 20

                   
NVMFS5C426NWFAFT1G


ONSNVMFS5C426NWFAFT1G
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ON Semiconductor 782
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AUD 2.4463
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41 A , 235 A40 V1.1 mOhmsN - Channel 2.5 V- 55 C+ 175 C3.8 w , 128 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel20 V65 nCEnhancementAec - Q101 
IPA80R360P7XKSA1


MOSFET LOW POWER_NEW
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Infineon 778
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AUD 1.8224
Multiples of: 1

13 A800 V310 mOhmsN - Channel 2.5 V- 55 C+ 150 C30 WThrough HolePG - TO - 220FP - 3TubeSi1 Channel20 V30 nCEnhancement Coolmos
TP65H050G4WS


MOSFET GAN FET 650V 34A TO247
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Transphorm 778
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AUD 17.3077
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34 A650 V60 mOhmsN - Channel 4.8 V- 55 C+ 150 C119 WSMD/SMTTO - 247 - 3BulkSi1 Channel- 20 V , + 20 V24 nCEnhancement  
RX2L10BBGC7G


MOSFETs RX2L10BBG is a power MOSFET with low on-resistance and high power package, suitable for switching, motor drives, and DC/DC converter.
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ROHM 777
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AUD 4.4328
Multiples of: 1

180 A60 V1.84 mOhmsN - Channel 2.5 V- 55 C+ 150 C100 WThrough HoleTO - 220FM - 3TubeSi1 Channel20 V160 nCEnhancement  
2N7002W


60V 115mA 3Ω@10V 2.5V null SOT-323 MOSFETs ROHS
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HXY MOS 776
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AUD 0.0171
Multiples of: 50

                   
IRLML5203TRPBF-HXY


30V 4.2A 55mΩ@10V 1.3V P Channel SOT-23 MOSFETs ROHS
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HXY MOS 776
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AUD 0.0363
Multiples of: 20

                   
SP010N03AGHTQ


100V 180A 3.1m 1 N-Channel TO-220-3L MOSFETs ROHS
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Siliup 769
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AUD 1.0137
Multiples of: 1

                   
BSC070N10NS3G-ES


100V 83A 7.1m@10V,30A 100W 3V@250uA PDFN5x6-8L MOSFETs ROHS
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ElecSuper 753
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AUD 0.4386
Multiples of: 1

                   
BSZ180P03NS3E G


Infineon Technologies MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
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Infineon 146
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AUD 0.3431
Multiples of: 1

39.6 A30 V13.5 mOhmsP - Channel 3.1 V- 55 C+ 150 C40 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V30 nCEnhancement Optimos
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