MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
055N85


85V 110A 202W 5.5mΩ@10V,40A 4V@250uA N Channel TO-263-2 MOSFETs ROHS
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Fuman 785
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AUD 0.7927
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ZXMN3F31DN8TA


MOSFET 30V Dual N-channel Enhance. Mode MOSFET
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Diodes Incorporated 785
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AUD 0.8258
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7.3 A30 V24 mOhmsN - Channel  - 55 C+ 150 C2.1 WSmd/SmtSO - 8ReelSi2 Channel20 V Enhancement  
IXTY44N10T


MOSFET 44 Amps 100V 25.0 Rds
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IXYS 785
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AUD 2.1179
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44 A85 V22 mOhmsN - Channel 4.5 V- 55 C+ 175 C130 WSmd/SmtTO - 252 - 3TubeSi1 Channel30 V33 nCEnhancement Hiperfet
RF1S540SM-JSM


TO-263-2L MOSFETs ROHS
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JSMSEMI 784
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AUD 1.1012
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IPB013N06NF2SATMA1


MOSFETs N
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Infineon 784
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AUD 3.3985
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198 A60 V1.3 mOhmsN - Channel 2.1 V- 55 C+ 175 C300 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V203 nCEnhancement StrongIRFET
AGM6015H


60V 210A 255W 1.5m@10V,100A 1.5V@250uA 1PCSNChannel TO-263 MOSFETs ROHS
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AGM-Semi 784
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AUD 0.9184
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SQD50P06-15L-GE3-VB


60V 50A 20mΩ@10V P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 761
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AUD 1.2535
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IXFH30N50Q3


MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A
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IXYS 754
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AUD 15.6627
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30 A500 V200 mOhmsn - channel    690 Wthrough holeTO - 247 - 3Tubesi1 channel30 V62 nC  hyperfet
CSD18511Q5A


MOSFET 40-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSONP -55 to 150
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Texas Instruments 741
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AUD 0.9782
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100 A40 V2.7 mOhmsN - channel 1.5 V- 55 C+ 175 C104 WSmd/smtVSONP - 8Cut TapeSi1_Channel20 V82 nCEnhancement Nexfet
BSC030P03NS3 G


Infineon Technologies MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3
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Infineon 10
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AUD 1.4957
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25.4 A- 30 V3 mOhmsP - Channel25 V3.1 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel25 V186 nCEnhancement Optimos
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