MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTBG022N120M3S


MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
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ON Semiconductor 794
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AUD 17.6821
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58 A1.2 kV30 mOhmsN - Channel 4.4 V- 55 C+ 175 C234 WSMD/SMTD2PAK - 7LReel , Cut TapeSiC1 Channel- 10 V , + 22 V148 nCEnhancement  
SIA471DJ-T1-GE3


MOSFET Pch 30V Vds 20V Vgs PowerPAK SC-70-6L
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Vishay 793
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AUD 0.3972
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- 30.3 A- 30 V11.5 mOhmsP - Channel - 2.5 V- 55 C+ 150 C Smd/SmtPOWERPAK SC - 70Cut TapeSi1 Channel20 V18.5 nCEnhancement  
IPB80R290C3A


MOSFET N-Channel MOSFET 20-200V
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Infineon 793
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AUD 5.6456
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84 A800 V80 mOhmsN - Channel   + 150 C Smd/SmtTO - 263 - 3ReelSi1 Channel    Coolmos
AON6312


DFN-8(5x6) MOSFETs ROHS
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TECH PUBLIC 792
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AUD 0.3532
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IXTP44N10T


MOSFET 44 Amps 100V 25.0 Rds
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IXYS 792
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AUD 1.6336
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44 A100 V30 mOhmsN - Channel  - 55 C+ 175 C130 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Hiperfet
NVMFS5C426NAFT1G


T6-D3F 40V NFET
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ON Semiconductor 792
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AUD 3.396
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235 A40 V1.1 mOhmsn - channel 2.5 V- 55 C+ 175 C128 Wsmd/smtSO - FL - 8Cut Tapesi1 channel20 V65 nCenhancementaec - q101 
SIHG47N60AE-GE3


MOSFET N-Ch 650V Vds 29nC Qgs
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Vishay 792
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AUD 6.8791
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43 A600 V0.056 OhmsN - Channel 4 V- 55 C+ 150 C313 WThrough HoleTO - 247AC - 3TubeSi1 Channel30 V121 nCEnhancement  
IRFI3306GPBF


MOSFET TRENCH MOSFET - PACKAGE
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Infineon 791
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AUD 2.9427
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71 A60 V3.3 mOhmsN - Channel 4 V- 55 C+ 175 C46 WThrough HoleTO - 220 - 3TubeSi 20 V90 nCEnhancement  
AO4406-HXY


30V 8.5A 1.5W 18mΩ@10V,7A N Channel SOP-8 MOSFETs ROHS
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HXY MOS 790
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AUD 0.0834
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CJL2311


20V 2.3A 90m@4.5V,2.5A 1.1W 400mV@250uA 1 N-Channel + 1 P-Channel SOT-23-6L MOSFETs ROHS
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Changjing Electronics Technology 732
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AUD 0.0709
Multiples of: 5

                   
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