MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSK220N04


MOSFET N Trench 40V 220A (Tc) 4V @ 250uA 3.2 mΩ @ 104A,10V TO-263-2 RoHS
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Winsok 799
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AUD 1.1493
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IXFK230N20T


MOSFET 230A 200V
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IXYS 795
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AUD 33.197
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230 A200 V7.5 mOhmsN - Channel 5 V- 55 C+ 175 C1.67 kWThrough HoleTO - 264 - 3TubeSi1 Channel- 20 V , 20 V358 nCEnhancement HiPerFET
XPQR8308QB,LXHQ


MOSFETs 80V UMOS10 L-TOGL 0.83mohm
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Toshiba 789
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AUD 4.0552
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350 A80 V830 mOhmsN - Channel 3.5 V- 55 C+ 175 C750 WSMD/SMT2 - 10AG1AReel , Cut TapeSi1 Channel- 20 V , + 20 V305 nCEnhancement  
NTMS4807NR2G


MOSFET NFET SO8 30V 14.8A 0.061R
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ON Semiconductor 788
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AUD 0.9077
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12.2 A30 V61 OhmsN - Channel  - 55 C+ 150 C1.55 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel20 V Enhancement  
ASM65R280E


DFN-8(8x8) MOSFETs ROHS
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ANHI 788
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AUD 1.214
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P80FG7R5EN-5071


MOSFET EETMOS series Power MOSFET SMD
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Shindengen 778
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AUD 1.7552
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            EETMOS2      
WSP4068


40V 10A 13.5mΩ@10V,12A 2.08W N Channel SO-8 MOSFETs ROHS
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Winsok 774
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AUD 0.1727
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MOT15N50F


TO-220F MOSFETs ROHS
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MOT 767
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AUD 0.4648
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IPD50P04P4L-11


MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
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Infineon 683
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AUD 0.8918
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50 A40 V17.2 mOhmsP - Channel 1.2 V- 55 C+ 175 C58 WSmd/SmtPG - TO - 252 - 3ReelSi1 Channel- 4.5 V45 nCEnhancementAec - Q101Optimos
NVMFWS2D3N04XMT1G


MOSFETs Single N-Channel Power MOSFET 40 V, 121A, 2.35 mohm
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ON Semiconductor 62
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AUD 1.1345
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121 A40 V2.35 mOhmsN - Channel 3.5 V- 55 C+ 175 C63 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V22.2 nCEnhancement  
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