MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDB2552


N-Channel 150 V 5A (Ta), 37A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
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ON Semiconductor 776
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AUD 3.4679
Multiples of: 25

   N - Channel  - 55 C+ 175 C Smd/SmtTO - 263Reel       
SUM65N20-30-E3


MOSFET 200V 65A 375W 30mohm @ 10V
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Vishay 776
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AUD 3.6101
Multiples of: 800

   N - Channel  - 55 C+ 175 C Smd/SmtTO - 263 - 3Reel       
STH310N10F7-2


STMicroelectronics MOSFET N-CH 100V 2.1mOhm 180A STripFET VI
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STMicroelectronics 776
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AUD 4.2649
Multiples of: 1

180 A100 V2.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C315 WSmd/SmtH2PAK - 2ReelSi1 Channel20 V180 nC  Stripfet
FDP036N10A


MOSFET PT5 NCH 100V 3.6Mohm PowerTrench MOSFET
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ON Semiconductor 776
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AUD 4.5662
Multiples of: 800

   N - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3Tube       
BUK964R4-40B,118


Trans MOSFET N-CH 40V 174A Automotive 3-Pin(2+Tab) D2PAK T/R
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Nexperia 776
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AUD 4.6642
Multiples of: 1

           Tape And Reel    Enhancement  
RJ1G10BBGTL1


MOSFETs Nch 40V 280A, TO-263AB, Power MOSFET
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ROHM 776
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AUD 4.8104
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280 A40 V1.43 mOhmsN - Channel 2.5 V- 55 C+ 150 C192 WSMD/SMTTO - 263AB - 3Reel , Cut TapeSi1 Channel20 V210 nCEnhancement  
STB45N65M5


MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh V MOS
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STMicroelectronics 776
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AUD 6.8134
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35 A650 V78 mOhmsN - Channel 3 V- 55 C+ 150 C210 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 25 V , 25 V82 nCEnhancement MDmesh
NTBGS002N06C


MOSFET NFET D2PAK7 60V 2.0MO
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ON Semiconductor 776
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AUD 8.9478
Multiples of: 1

211 A60 V2.2 mOhmsN - Channel 4 V- 55 C+ 175 C178 WSMD/SMTD2PAK - 7Reel , Cut TapeSi1 Channel- 20 V , + 20 V62.1 nCEnhancement  
IPLT60R037CM8XTMA1


MOSFETs 600 V CoolMOS 8 Power Transistor
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Infineon 760
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AUD 6.1567
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70 A650 V37 mOhmsN - Channel 4.7 V- 55 C+ 150 C390 WSMD/SMTPG - HDSOP - 16 Si1 Channel20 V79 nCEnhancement CoolMOS
IPQC60T010S7AXTMA1


MOSFETs CoolMOS S7TA with embedded temperature sensor
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Infineon 727
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AUD 25.8418
Multiples of: 1

174 A600 V10 mOhmsN - Channel 4 V- 40 C+ 150 C694 WSMD/SMTPG - HDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V318 nCEnhancement CoolMOS
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