MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB015N04NG(UMW)


TO-263 MOSFETs ROHS
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Youtai 774
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AUD 0.7451
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MPT012N08-T


TOLL-8 MOSFETs ROHS
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Minos 774
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AUD 0.7864
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HSH3129


TO-263 MOSFETs ROHS
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HUASHUO 774
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AUD 1.5342
Multiples of: 1

                   
FDMD8560L


MOSFET 60V Dual N-Channel PowerTrench MOSFET
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ON Semiconductor 774
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AUD 1.8062
Multiples of: 1

22 A , 22 A60 v , 60 V5.4 mOhms , 5.4 mOhmsn - channel 1 v , 1 V- 55 C+ 150 C2.2 Wsmd/smtPOWER56 - 8Reelsi2 channel+/- 20 v , +/- 20 V92 nC , 92 nCenhancement  
SSM6N35AFE,LF


MOSFET LowON Res MOSFET ID=.25A VDSS=20V
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Toshiba 773
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AUD 0.1562
Multiples of: 1

250 mA20 V750 mOhms , 750 mOhmsN - Channel 350 mV-+ 150 C250 mW (1/4 w)Smd/SmtSOT - 563 - 6Cut TapeSi2 Channel10 V340 pC , 340 pCEnhancement  
IRFI3205PBF


Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
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Infineon 772
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AUD 1.8134
Multiples of: 796

            Hexfet®      
WMM26N60F2


Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A
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Wayon 772
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AUD 2.403
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            WMOS F2      
IXFH12N100P


MOSFET 12 Amps 1000V
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IXYS 771
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AUD 9.7358
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12 A1 kV1.05 Ohmsn - channel 3.5 V- 55 C+ 150 C463 Wthrough holeTO - 247 - 3Tubesi1 channel10 V80 nCenhancement polar, hiperfet
FDP8860(UMW)


TO-220 MOSFETs ROHS
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Youtai 763
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AUD 0.645
Multiples of: 1

                   
FQPF27P06


Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
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ON Semiconductor 679
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AUD 2.0342
Multiples of: 1

            Qfet®      
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