MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF540NSTRRPBF


Transistor: N-MOSFET; unipolar; 100V; 33A; 3.8W; D2PAK
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Infineon 800
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AUD 2.3806
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   N - Channel  - 55 C+ 175 C Smd/SmtD2PAKReel       
FDD6N50FTM


MOSFET 500V N-Channel
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ON Semiconductor 770
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AUD 0.9112
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5.5 A500 V1.15 OhmsN - Channel  - 55 C+ 150 C89 WSmd/SmtDPAKReelSi1 Channel30 V Enhancement  
IXTA2R4N120P


IXYS MOSFET 2.4 Amps 1200V 7.5 Rds
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IXYS 769
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AUD 7.1254
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2.4 A1200 V7.5 Ohmsn - channel  - 55 C+ 150 C125 Wsmd/smtTO - 252 - 3Tubesi1 channel20 V enhancement  
SP80N03BGHTD


TO-263-3L MOSFETs ROHS
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Siliup 768
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AUD 0.6335
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IRF9620PBF-BE3


P-Channel 200V 3.5A (Tc) 40W (Tc) Through Hole TO-220AB
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Vishay 768
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AUD 0.8633
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3.5 A200 V1.5 OhmsP - Channel 4 V- 55 C+ 150 C40 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V22 nCEnhancement  
IRF630NSTRLPBF


Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
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Infineon 768
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AUD 0.887
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9.3 A200 V300 mOhmsN - Channel  - 55 C+ 175 C82 WSmd/SmtD2PAKReelSi1 Channel20 V23.3 nCEnhancement  
Hot VN0109N3-G


N-Channel 90 V 350mA (Tj) 1W (Tc) Through Hole TO-92-3
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Microchip 768
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AUD 0.8951
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350 mA90 V5 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel  Enhancement  
FDBL0120N40


Fairchild Semiconductor MOSFET
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ON Semiconductor 768
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AUD 2.8239
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240 A40 V1.2 mOhmsN - Channel20 V2 V- 55 C+ 175 C300 WSmd/SmtMO - 229A - 8ReelSi 20 V90 nCEnhancement Powertrench
AUIRF3808


International Rectifier MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms
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Infineon 768
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AUD 3.3815
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140 A75 V7 mOhmsN - Channel    330 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V150 nC Aec - Q101 
SI2323CDS-T1-GE3


mosfet p trench 20v 6a 1v @ 250ua 39 m @ 4.6a,4.5v sot-23 (sot-23-3) rohs
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Vishay 661
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AUD 0.3406
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