MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot ZVN4206GTA


N-Channel 60 V 1A (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 970
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AUD 0.6646
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1 A60 V1 OhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel10 V Enhancement  
BUK7M27-80EX


MOSFET BUK9M28-80E/MLFPAK/REEL 7" Q1/
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Nexperia 771
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AUD 0.4252
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FDB8832(UMW)


TO-263 MOSFETs ROHS
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Youtai 771
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AUD 0.645
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SQJ444EP-T1_GE3


MOSFET N-Ch 40V Vds AEC-Q101 Qualified
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Vishay 771
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AUD 0.7633
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60 A40 V2.6 mOhmsN - Channel 1.5 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V80 nCEnhancementAec - Q101Trenchfet
PTY10HN08


TO-263 MOSFETs ROHS
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PUOLOP 771
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AUD 0.9666
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SQM40022E_GE3


MOSFET 40V Vds 20V Vgs D2PAK (TO-263)
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Vishay 771
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AUD 1.6631
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150 A40 V163 OhmsN - Channel 2.5 V- 55 C+ 175 C150 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel10 V106 nCEnhancement  
NTBLS0D7N06C


MOSFET NFET TOLL 60V 0.75MO
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ON Semiconductor 771
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AUD 7.5358
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UF3SC065030B7S


MOSFET 650V/30mOhm, SiC, FAST STACK CASCODE, G3, D2PAK-7L, REDUCED Rth
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UnitedSiC 771
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AUD 25.6612
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62 A650 V27 mOhmsN - Channel 6 V- 55 C+ 175 C214 WSMD/SMTD2PAK - 7Reel , Cut TapeSiC1 Channel- 25 V , + 25 V43 nCEnhancement SiC FET
RCJ050N25TL


Trans MOSFET N-CH 250V 5A Automotive 3-Pin(2+Tab) LPTS T/R
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ROHM 720
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AUD 0.7034
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5 A250 V970 mOhmsN - Channel 3.5 V- 55 C+ 150 C30 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel30 V8.5 nCEnhancement  
CSD18543Q3A


MOSFET 60-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm 8-VSONP -55 to 150
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Texas Instruments 45
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AUD 0.5454
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12 A60 V12.0 mOhmsN - channel 1.5 V- 55 C+ 150 C66 WSmd/smtVSONP - 8Cut TapeSi1_Channel20 V11.1 nCEnhancement Nexfet
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