IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8687888990...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGP19NC60HD


IGBT Transistors 19 A - 600 V very fast IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 7
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AUD 4.2222
Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CStgp19nc60hd
IXBT16N170A


IGBT Transistors 1700V 16A
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IXYS 7
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AUD 25.1582
Multiples of: 1

Single1700 V 20 V    TO - 268 - 3TubeSiSmd/Smt150 W- 55 C+ 150 CIxbt16n170
IXBX75N170A


IGBT Transistors 65Amps 1700V
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IXYS 7
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AUD 117.2889
Multiples of: 1

        PLUS 247 - 3TubeSiThrough Hole   Ixbx75n170
DDB6U180N16RRB37BOSA1


IGBT Transistors LOW POWER ECONO
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Infineon 7
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AUD 210.4423
Multiples of: 1

         Tray      
RGT30NS65DGTL


ROHM Semiconductor IGBT Transistors
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ROHM 6
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AUD 2.0862
Multiples of: 1

 650 V1.65 V+/- 30 V30 A+/- 200 nA  TO - 263 - 3ReelSiSmd/Smt133 W- 40 C+ 175 CRgt30ns65d
APT80GA60LD40


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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Microchip 6
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AUD 16.3522
Multiples of: 1

Single600 V2 V30 V143 A100 nA  TO - 264 - 3TubeSiSmd/Smt625 W- 55 C+ 150 C 
RGT00TS65DGC11


IGBT Transistors 650V 50A Trench IGBT Field Stop TO-247N
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ROHM 5
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AUD 5.6955
Multiples of: 1

Single650 V1.65 V+/- 30 V85 A200 nA  TO - 247N - 3Tube Through Hole277 W- 40 C+ 175 C 
IGW40T120


Transistor: IGBT; 1200V; 40A; 483W; TO247-3
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Infineon 5
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AUD 6.0587
Multiples of: 1

      483 W   Trenchstop     
RGTV00TK65DGC11


IGBT Transistors 650V 50A TO-3PFM Field Stp Trnch IGBT
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ROHM 5
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AUD 7.1821
Multiples of: 1

Single650 V1.5 V30 V45 A200 nA  TO - 3PFMTubeSiThrough Hole94 W- 40 C+ 175 C 
IKP20N60T


IGBT Transistors LOW LOSS DuoPack 600V 20A
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Infineon 4
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AUD 1.3118
Multiples of: 1

Single600 V1.5 V+/- 20 V41 A100 nA  TO - 220 - 3TubeSiThrough Hole166 W- 40 C+ 150 CIkp20n60
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First...8687888990...

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