IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8687888990...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW30NC60KD


Transistor: IGBT; 600V; 28A; 200W; TO247-3
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STMicroelectronics 327
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AUD 3.15
Multiples of: 1

      200 W         
AOK20B60D1


Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
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Alpha & Omega 44
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AUD 3.8088
Multiples of: 1

  1.85 V   83 W         
NGTB40N65IHRTG


IGBT Transistors 650V/40A MONOLITHIC RC IG
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ON Semiconductor 43
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AUD 2.8654
Multiples of: 1

Single   80 A    Tube Through Hole - 40 C+ 175 C 
IHW15N120E1XKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 42
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AUD 2.74
Multiples of: 1

Single1.2 kV1.5 V+/- 20 V30 A100 nA  TO - 247 - 3TubeSiThrough Hole156 W- 40 C+ 150 C 
STGP20V60DF


STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT
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STMicroelectronics 42
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AUD 3.1912
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Single600 V2.3 V20 V40 A250 nA  TO - 220TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
IXYK120N120C3


IGBT Transistors 1200V 220A XPT IGBT
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IXYS 42
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AUD 39.2071
Multiples of: 1

Single1200 V2.55 V30 V240 A100 nA  TO - 264 - 3TubeSiThrough Hole1.5 kW- 55 C+ 175 CPlanar
STGW100H65FB2-4


IGBT Transistors PTD IGBT & IPM
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STMicroelectronics 40
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AUD 5.94
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         Tube      
DG20X06T1


Transistor: IGBT; 600V; 29A; 313W; TO220
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STARPOWER 38
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AUD 2.5118
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      313 W         
IXA30RG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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IXYS 37
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AUD 12.36
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          Si    Ixa30rg1200dhglb
IKW50N60H3


IGBT Transistors HIGH SPEED SWITCHING
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Infineon 16
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AUD 4.2059
Multiples of: 1

Single600 V2.25 V20 V100 A100 nA  TO - 247 - 3TubeSiThrough Hole333 W- 40 C+ 175 CIkw50n60
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First...8687888990...

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