IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8687888990...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGW30N60T


IGBT Transistors LOW LOSS IGBT TECH 600V 30A
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Infineon 114
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AUD 2.1836
Multiples of: 1

Single600 V1.5 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole187 W- 40 C+ 150 CIgw30n60
KGF40N65KDC-U/P


TO-247 IGBTs ROHS
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KEC 19
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AUD 1.4747
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MSG100T120FQC1


TO-247Plus IGBT Transistors / Modules ROHS
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MASPOWER 19
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AUD 9.0281
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APT40GT60BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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Microchip 19
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AUD 10.7885
Multiples of: 1

Single600 V2 V30 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole345 W- 55 C+ 150 C 
STGW75H65DFB2-4


IGBT Transistors Trench gate field-stop 650 V 75 A high-speed HB2 series
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STMicroelectronics 19
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AUD 13.1433
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         Tube      
APT25GT120BRDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
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Microchip 18
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AUD 11.4104
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Single1.2 kV3.2 V30 V54 A120 nA  TO - 247 - 3TubeSiThrough Hole347 W- 55 C+ 150 C 
NTE3300


Transistor: IGBT; 400V; 10A; 30W; TO220FP
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NTE 18
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AUD 13.0222
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      30 W         
IXBT16N170AHV


IGBT Transistors Disc IGBT BiMosfet-High Volt TO-268AA
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IXYS 18
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AUD 26.5333
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Single1.7 kV6 V20 V16 A100 nA  TO - 268HV - 2 SiSmd/Smt150 W- 55 C+ 150 C 
IRG4BC40KPBF


Transistor: IGBT; 600V; 42A; 160W; TO220AB
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Infineon 17
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AUD 3.1194
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      160 W         
NGTG30N60FWG


IGBT Transistors 600V/30A IGBT NPT TO-247
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ON Semiconductor 17
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AUD 3.1254
Multiples of: 1

Single600 V1.45 V30 V60 A100 nA167 W TO - 247Tube Through Hole - 55 C+ 150 CNgtg30n60fwg
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First...8687888990...

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