IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8687888990...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IHW30N135R3FKSA1


Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
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Infineon 16
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AUD 4.0881
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      175 W   Trenchstop     
STGWA15H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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STMicroelectronics 16
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AUD 5.3846
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Single1200 V2.5 V20 V30 A+/- 250 nA    SiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
IXGH20N120A3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
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IXYS 16
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AUD 6.3701
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Single1.2 kV2.3 V+/- 20 V40 A100 nA  TO - 247AD - 3TubeSiThrough Hole180 W- 55 C+ 150 CIxgh20n120
IXBH42N170A


IGBT Transistors BIMOSET 42A 1700V
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IXYS 15
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AUD 41.8349
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Single1700 V5.2 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbh42n170
FGH40T120SMD-F155


TO-247-3 IGBTs ROHS
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ON Semiconductor 14
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AUD 25.8031
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Single1200 V2 V25 V80 A400 nA  TO - 247G03 - 3TubeSiThrough Hole555 W- 55 C+ 175 CFgh40t120smd
IXBK55N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS 14
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AUD 201.4444
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Single3 kV2.7 V25 V130 A+/- 200 nA  TO - 264 - 3TubeSiThrough Hole625 W- 55 C+ 150 CVery High Voltage
IXGT10N170


IGBT Transistors 20 Amps 1700 V 4 V Rds
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IXYS 13
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AUD 16.6048
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Single1.7 kV2.7 V20 V20 A100 nA  TO - 268 - 3TubeSiSmd/Smt110 W- 55 C+ 150 CIxgt10n170
NGTG30N60FLWG


IGBT Transistors 600V/30A IGBT LPT TO-247
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ON Semiconductor 12
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AUD 3.3175
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Single600 V1.65 V30 V60 A100 nA250 W TO - 247TubeSiThrough Hole250 W- 55 C+ 150 CNgtg30n60flwg
SGT40N60NPFDPN


IGBTs Field Stop 600V 80A TO-3P RoHS
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Silan 11
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AUD 1.2169
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IKW75N65ET7XKSA1


IGBT Transistors INDUSTRY 14
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Infineon 11
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AUD 4.6031
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First...8687888990...

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