IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8687888990...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH75T65SQDT-F155


IGBT Transistors 650V 40A FS4 TRENCH IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 34
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AUD 3.2371
Multiples of: 1

Single650 V1.6 V 150 A400 nA  TO - 247 - 3Tube Through Hole375 W- 55 C+ 175 C 
MSG80N350HLC0


80A 350V TO-247 IGBT Transistors / Modules ROHS
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MASPOWER 34
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AUD 3.482
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STGW75H65DFB2-4


IGBT Transistors Trench gate field-stop 650 V 75 A high-speed HB2 series
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STMicroelectronics 34
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AUD 12.84
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         Tube      
MSG25T120FQC


25A 1.2kV TO-247 IGBT Transistors / Modules ROHS
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MASPOWER 33
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AUD 1.9973
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SGM75HF12A1TFD1


- IGBTs ROHS
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Silan 33
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AUD 27.5473
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MSG40T65HPC0


40A 650V TO-247 IGBT Transistors / Modules ROHS
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MASPOWER 32
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AUD 2.0817
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IHW30N65R5XKSA1


Transistor: IGBT; 650V; 30A; 88W; TO247-3
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Infineon 32
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AUD 2.373
Multiples of: 1

      88 W         
IXGP20N120B3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
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IXYS 32
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AUD 7.3
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         TubeSi    Ixgp20n120
IXA30RG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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IXYS 32
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AUD 12.06
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          Si    Ixa30rg1200dhglb
BGH50N65HS1


Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
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BASiC Semiconductor 32
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AUD 14.1
Multiples of: 1

      357 W   Trench, Field Stop, SiC SBD     
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First...8687888990...

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