IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8687888990...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NGTB25N120FL3WG


IGBT Transistors IGBT 1200V 25A FS3 SOLAR/
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ON Semiconductor 1192
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AUD 2.6921
Multiples of: 1

Single1.2 kV1.7 V+/- 20 V100 A200 nA  TO 247 - 3TubeSiThrough Hole349 W- 55 C+ 175 C 
FGI3040G2_F085


Fairchild Semiconductor IGBT Transistors ECOSPARK 2 - 400V IGNITION IGBT
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ON Semiconductor 48
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AUD 1.8477
Multiples of: 1

Single400 V1.68 V+/- 10 V41 A   TO - 262AA - 3TubeSiThrough Hole150 W- 55 C+ 175 CFgi3040g2_F085
KGF50N65KDF-U/H


TO-247 IGBTs ROHS
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KEC 48
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AUD 2.5884
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IKW30N65H5


IGBT Transistors INDUSTRY 14
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Infineon 48
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AUD 5.2084
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STGP4M65DF2


IGBT Transistors Trench Gate IGBT M Series 650V 4A
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STMicroelectronics 47
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AUD 1.8587
Multiples of: 1

Single650 V1.6 V+/- 20 V8 A250 uA  TO - 220 - 3Tube Through Hole68 W- 55 C+ 175 CStgp4m65df2
STGW40H65DFB


IGBT Transistors 600V 40A trench gate field-stop IGBT
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STMicroelectronics 47
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AUD 2.5979
Multiples of: 1

Single650 V1.8 V20 V80 A250 nA283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40h65dfb
STGFW80V60F


STMicroelectronics IGBT Transistors
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STMicroelectronics 47
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AUD 3.96
Multiples of: 1

Single600 V1.85 V+/- 20 V120 A250 nA  TO - 3PFTubeSiThrough Hole79 W- 55 C+ 175 C600 - 650V Igbts
GT50JR21(STA1,E,S)


Transistor: IGBT; 600V; 49A; 230W; TO3PN
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Toshiba 47
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AUD 5.1118
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      230 W         
DG40X12T2


TO-247AD IGBTs ROHS
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STARPOWER 41
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AUD 6.552
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IGW40N65F5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon 0
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AUD 4.1896
Multiples of: 1

Single650 V1.6 V+/- 20 V74 A100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 40 C+ 175 CTrenchstop 5 F5
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First...8687888990...

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