IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...9192939495...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXXH80N65B4H1


IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
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IXYS 5
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AUD 13.1154
Multiples of: 1

Single650 V1.65 V20 V160 A100 nA  TO - 247AD - 3TubeSiThrough Hole625 W- 55 C+ 175 CIxxh80n65
IXXH100N60C3


IGBT Transistors XPT IGBT C3-Class 600V/190Amp
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IXYS 5
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AUD 13.1651
Multiples of: 1

 600 V2.2 V20 V190 A100 nA  TO - 247ADTubeSiThrough Hole830 W- 55 C+ 150 CIxxh100n60
FGA6530WDF


Fairchild Semiconductor IGBT Transistors FS3 650V SHD prolferation
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ON Semiconductor 4
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AUD 2.7413
Multiples of: 1

Single650 V1.8 V+/- 20 V60 A+/- 400 nA  TO - 3PN - 3TubeSiThrough Hole176 W- 55 C+ 175 CFga6530wdf
RGT40TM65DGC9


IGBT Trench Field Stop 650 V 17 A 39 W Through Hole TO-220NFM
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ROHM 4
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AUD 3.25
Multiples of: 1

Single650 V1.65 V30 V17 A200 nA  TO - 220 - 3TubeSiThrough Hole39 W- 40 C+ 175 C 
IHW20N135R3


IGBT Transistors IGBT PRODUCTS TrenchStop
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Infineon 4
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AUD 4.2429
Multiples of: 1

Single1350 V1.6 V+/- 20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole310 W- 40 C+ 175 CRc
IXGX120N60A3


IGBT Transistors 120 Amps 600V
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IXYS 4
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AUD 30.9397
Multiples of: 1

Single600 V1.2 V20 V200 A400 nA  PLUS 247 - 3TubeSiThrough Hole780 W- 55 C+ 150 CIxgx120n60
IFF300B17N2E4PB11BPSA1


IGBT Transistors LOW POWER ECONO
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Infineon 4
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AUD 486.62
Multiples of: 1

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NGTB30N65IHL2WG


IGBT Transistors 650V/30A FAST IGBT FSII T
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ON Semiconductor 3
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AUD 5.1508
Multiples of: 1

Single650 V1.6 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 175 C 
IXXK200N65B4


IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT
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IXYS 3
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AUD 48.8365
Multiples of: 1

Single650 V1.4 V20 V370 A200 nA  TO - 264 - 3TubeSiThrough Hole1150 W- 55 C+ 175 CIxxk200n65
IXBN42N170A


IGBT Transistors 42 Amps 1700V 6.0 V Rds
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IXYS 3
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AUD 72.6667
Multiples of: 1

Single1700 V 20 V    SOT - 227B - 4TubeSiSmd/Smt - 55 C+ 150 CIxbn42n170
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First...9192939495...

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