IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW75N65EL5


TO-247-3 IGBTs ROHS
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Infineon 29
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between Fri. 09 Oct to Wed. 14 Oct
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AUD 5.968

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          si     
RGTV80TS65DGC11


ROHM Semiconductor
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ROHM 29
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between Fri. 25 Sep to Thu. 01 Oct
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AUD 8.8403

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MSG75T120FQC1


TO-247Plus IGBT Transistors / Modules ROHS
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MASPOWER 29
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between Fri. 09 Oct to Wed. 14 Oct
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AUD 9.1337

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HGTG5N120BND


IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
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ON Semiconductor 29
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between Fri. 09 Oct to Wed. 14 Oct
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AUD 10.0612

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Single1200 V2.45 V+/- 20 V21 A+/- 250 nA  TO - 247 - 3TubeSiThrough Hole167 W- 55 C+ 150 CHgtg5n120bnd
IKD06N60RATMA1


Trench and Field Stop technology IGBT
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Infineon 28
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between Thu. 01 Oct to Mon. 05 Oct
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AUD 0.6537

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Single600 V1.65 V+/- 20 V12 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt100 W- 40 C+ 175 CRc
DG10X12T2


Transistor: IGBT; 1200V; 10A; 96W; TO247
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STARPOWER 28
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between Fri. 25 Sep to Thu. 01 Oct
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AUD 3.2

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      96 W         
IHW25N120E1XKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 28
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between Fri. 25 Sep to Thu. 01 Oct
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AUD 4.04

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Single1.2 kV1.5 V+/- 20 V50 A100 nA  TO - 247 - 3TubeSiThrough Hole231 W- 40 C+ 150 C 
BGH75N65ZF1


Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
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BASiC Semiconductor 28
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between Fri. 25 Sep to Thu. 01 Oct
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AUD 17.78

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      405 W   Trench, Field Stop, SiC SBD     
IHW20N120R5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop
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Infineon 27
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between Thu. 01 Oct to Mon. 05 Oct
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AUD 2.0743

Multiples of: 1

Single1200 V1.55 V+/- 20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole288 W- 40 C+ 175 CRc
MSG40T120FQC


40A 1.2kV TO-247 IGBT Transistors / Modules ROHS
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MASPOWER 27
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between Fri. 09 Oct to Wed. 14 Oct
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AUD 2.9182

Multiples of: 1

                
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