IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
DG75H12T2


Transistor: IGBT; 1.2kV; 75A
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STARPOWER 30
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between Tue. 30 Jun to Mon. 06 Jul
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AUD 12.7235

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BGH40N120HS1


Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
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BASiC Semiconductor 30
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between Tue. 30 Jun to Mon. 06 Jul
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AUD 13.5471

Multiples of: 1

          Trench, Field Stop, SiC SBD     
IXGT10N170A


IGBT Transistors 20 Amps 1700 V 7 V Rds
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IXYS 29
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between Mon. 06 Jul to Wed. 08 Jul
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AUD 19.7838

Multiples of: 1

Single1.7 kV4.5 V20 V10 A100 nA  TO - 268 - 3TubeSiSmd/Smt140 W- 55 C+ 150 CIxgt10n170
IKD06N60RATMA1


Trench and Field Stop technology IGBT
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Infineon 28
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between Mon. 06 Jul to Wed. 08 Jul
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AUD 0.6663

Multiples of: 1

Single600 V1.65 V+/- 20 V12 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt100 W- 40 C+ 175 CRc
BGH75N65ZF1


Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
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BASiC Semiconductor 28
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between Tue. 30 Jun to Mon. 06 Jul
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AUD 18.2618

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      405 W   Trench, Field Stop, SiC SBD     
STGP14NC60KD


Transistor: IGBT; 600V; 14A; 80W; TO220AB
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STMicroelectronics 27
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between Tue. 30 Jun to Mon. 06 Jul
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AUD 2.3676

Multiples of: 1

      80 W         
STGY80H65DFB


IGBT Transistors Trench gte FieldStop IGBT 650V 80A
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STMicroelectronics 27
Ships to you
between Mon. 06 Jul to Wed. 08 Jul
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AUD 13.5614

Multiples of: 1

Single650 V1.9 V+/- 20 V120 A250 nA469 W MAX247 - 3TubeSiThrough Hole469 W- 55 C+ 175 CStgy80h65
IXGH48N60B3C1


IGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A
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IXYS 27
Ships to you
between Tue. 30 Jun to Mon. 06 Jul
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AUD 14.4667

Multiples of: 1

 600 V1.8 V+/- 20 V75 A100 nA  TO - 247AD - 3TubeSicThrough Hole300 W- 55 C+ 150 CIxgh48n60
STGF20NB60S


STMicroelectronics IGBT Transistors N Ch 13A-600V
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STMicroelectronics 26
Ships to you
between Mon. 06 Jul to Wed. 08 Jul
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AUD 1.3907

Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3 FPTubeSiThrough Hole - 55 C+ 150 C600 - 650V Igbts
NGTB50N65FL2WG


IGBTs Trench Field Stop 650V 100A TO-247 RoHS
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ON Semiconductor 0
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AUD 6.7776

Multiples of: 30

                
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