IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FF300R17ME4PB11BPSA1


IGBT Transistors MEDIUM POWER ECONO
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 3
Ships to you
between Thu. 19 Feb to Mon. 23 Feb
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AUD 511.203

Multiples of: 1

         Tray      
IXGH2N250


IGBT Transistors IGBT NPT-VERY HI VOLTAGE
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IXYS 2
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between Thu. 19 Feb to Mon. 23 Feb
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AUD 16.7968

Multiples of: 1

        TO - 247AD - 3TubeSiThrough Hole   Very High Voltage
STGW20V60DF


STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT
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STMicroelectronics 1
Ships to you
between Thu. 19 Feb to Mon. 23 Feb
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AUD 2.4463

Multiples of: 1

Single600 V2.3 V20 V40 A250 nA  TO - 247Tube Through Hole167 W- 55 C+ 175 C600 - 650V Igbts
FGH60N60SMD_F085


IGBT Transistors 600V/60A Field Stop IGBT Gen 2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1
Ships to you
between Thu. 19 Feb to Mon. 23 Feb
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AUD 6.7571

Multiples of: 1

Single600 V2.14 V+/- 20 V120 A400 nA600 W TO - 247 - 3TubeSiThrough Hole600 W- 55 C+ 175 CFgh60n60
STGYA50H120DF2


IGBT Transistors Trench gate field-stop 1200 V 50 A high-speed H series IGBT
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STMicroelectronics 1
Ships to you
between Fri. 27 Feb to Wed. 04 Mar
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AUD 10.8833

Multiples of: 1

      535 W         
IXXN100N60B3H1


IGBT Transistors XPT 600V IGBT GenX3 w/Diode
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IXYS 1
Ships to you
between Thu. 19 Feb to Mon. 23 Feb
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AUD 36.5444

Multiples of: 1

         TubeSi    Planar
IXBN75N170A


IXYS IGBT Transistors 75 Amps 1700V 6.00 Rds
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IXYS 1
Ships to you
between Fri. 13 Feb to Thu. 19 Feb
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AUD 108.1134

Multiples of: 1

Single1.7 kV4.95 V+/- 20 V75 A100 nA  SOT - 227B - 4TubeSiSmd/Smt625 W- 55 C+ 150 CIxbn75n170
STGF10NB60SD


STMicroelectronics IGBT Transistors N-Ch 600 Volt 10 Amp
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STMicroelectronics 1
Ships to you
between Fri. 27 Feb to Wed. 04 Mar
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AUD 1.5438

Multiples of: 1

Single600 V1.8 V+/- 20 V20 A+/- 100 nA  TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 C600 - 650V Igbts
RGT50NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 1
Ships to you
between Fri. 27 Feb to Wed. 04 Mar
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AUD 1.6952

Multiples of: 1

Single650 V1.65 V30 V48 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt194 W- 40 C+ 175 C 
GT50JR22(S1WLD,E,S)


TO-3P-3 IGBT Transistors / Modules ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 0
6 to 16 Weeks Calender.png

AUD 1.9166

Multiples of: 1

                
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