IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...9192939495...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYX30N170CV1


IGBT Transistors 1700V/108A High Voltage XPT IGBT
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IXYS 907
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AUD 44.6757
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Single1700 V3 V20 V108 A100 nA  TO - 247PLUS - 3TubeSiThrough Hole937 W- 55 C+ 175 C 
SPT60N65F1A1


TO-247-3 IGBTs ROHS
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SPTECH 27
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AUD 3.1889
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STGW30V60F


STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
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STMicroelectronics 27
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AUD 10.5803
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Single600 V1.85 V20 V60 A250 nA  TO - 247 - 3TubeSiThrough Hole260 W- 55 C+ 175 C600 - 650V Igbts
STGY80H65DFB


IGBT Transistors Trench gte FieldStop IGBT 650V 80A
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STMicroelectronics 27
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AUD 13.5614
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Single650 V1.9 V+/- 20 V120 A250 nA469 W MAX247 - 3TubeSiThrough Hole469 W- 55 C+ 175 CStgy80h65
STGF20NB60S


STMicroelectronics IGBT Transistors N Ch 13A-600V
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STMicroelectronics 26
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AUD 1.3907
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Single600 V +/- 20 V    TO - 220 - 3 FPTubeSiThrough Hole - 55 C+ 150 C600 - 650V Igbts
MSG100T120FQW


100A 1.2kV TO-264 IGBT Transistors / Modules ROHS
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MASPOWER 26
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AUD 11.1099
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NGTB50N120FL2WG


IGBT Transistors 1200V/50A FAST IGBT FSII
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ON Semiconductor 26
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AUD 12.5654
Multiples of: 1

Single1200 V2.2 V30 V100 A200 nA535 W TO - 247TubeSiThrough Hole535 W- 55 C+ 175 CNgtb50n120fl2
IXBT10N170


IGBT Transistors 10 Amps 1700V 2.3 Rds
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IXYS 26
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AUD 13.14
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Single1.7 kV3.4 V20 V20 A100 nA  TO - 268 - 3TubeSiSmd/Smt140 W- 55 C+ 150 CIxbt10n170
IGW30N65L5


IGBT Transistors INDUSTRY 14
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Infineon 25
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AUD 1.9174
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STGF3NC120HD


STMicroelectronics IGBT Transistors N-Ch 1200 Volt 3 Amp
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STMicroelectronics 25
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AUD 2.52
Multiples of: 1

Single1200 V2.8 V+/- 20 V6 A+/- 100 nA  TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 C900 - 1300V Igbts
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First...9192939495...

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