IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...9192939495...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXBT10N170


IGBT Transistors 10 Amps 1700V 2.3 Rds
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IXYS 26
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AUD 12.2827
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Single1.7 kV3.4 V20 V20 A100 nA  TO - 268 - 3TubeSiSmd/Smt140 W- 55 C+ 150 CIxbt10n170
BGH50N65ZF1


Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
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BASiC Semiconductor 25
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AUD 12.7441
Multiples of: 1

      357 W   Trench, Field Stop, SiC SBD     
IXXK110N65B4H1


IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
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IXYS 24
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AUD 28.1286
Multiples of: 1

Single650 V1.75 V20 V240 A100 nA  TO - 264 - 3TubeSiThrough Hole880 W- 55 C+ 175 CIxxk110n65
NGTB15N135IHRWG


Trans IGBT Chip N-CH 1.35KV 30A 3-Pin(3+Tab) TO-247 Rail
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ON Semiconductor 23
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AUD 3.1544
Multiples of: 1

Single        Rail/TubeSi    Ngtb15n135ihr
F3L75R12W1H3B11BPSA1


IGBT Transistors LOW POWER EASY
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Infineon 23
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AUD 39.8043
Multiples of: 1

         Tray      
IXA20PG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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IXYS 22
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AUD 15.4373
Multiples of: 1

          Si    Ixa20pg1200dhglb
IXBT24N170


IGBT Transistors BiMOSFETs/Reverse Conducting IGBTs
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IXYS 22
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AUD 26.488
Multiples of: 1

        TO - 268 - 2TubeSiThrough Hole   Ixbt24n170
AOT20B65M1


Transistor: IGBT; 650V; 20A; 114W; TO220; Eoff: 0.27mJ; Eon: 0.47mJ
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Alpha & Omega 19
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AUD 1.904
Multiples of: 1

  1.7 V   114 W         
IHW40N65R5XKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 19
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AUD 2.8206
Multiples of: 1

        TO - 247 - 3TubeSi    Rc
AOK50B60D1


Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ
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Alpha & Omega 13
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AUD 6.0293
Multiples of: 1

  1.85 V   125 W         
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First...9192939495...

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