IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...96979899100...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGP15M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V, 15 A low loss
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 11
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AUD 1.0701
Multiples of: 1

Single650 V1.55 V+/- 20 V30 A+/- 250 uA  TO - 220 - 3 SiThrough Hole136 W- 55 C+ 175 CStgp15m65df2
NGTB75N60SWG


ON Semiconductor IGBT Transistors FSII 75A 600V Welding
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ON Semiconductor 11
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AUD 5.8457
Multiples of: 1

Single600 V1.7 V+/- 20 V100 A200 nA  TO - 247 - 3TubeSiThrough Hole595 W- 55 C+ 175 C 
IXBH16N170


Trans IGBT Chip N-CH 1.7KV 40A 3-Pin(3+Tab) TO-247AD
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 11
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AUD 19.25
Multiples of: 1

Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole150 W- 55 C+ 150 CIxbh16n170
IXBK55N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS 10
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AUD 173.1707
Multiples of: 1

Single3 kV2.7 V25 V130 A+/- 200 nA  TO - 264 - 3TubeSiThrough Hole625 W- 55 C+ 150 CVery High Voltage
VS-GP300TD60S


IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT
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Vishay 10
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AUD 303.52
Multiples of: 1

Dual600 V-20 V580 A+/- 500 nA  DIAP SiChassis1.136 kW- 40 C+ 150 C 
STGFW30V60DF


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 9
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AUD 2.1529
Multiples of: 1

Single600 V1.85 V+/- 20 V60 A250 nA  TO - 3PFTubeSiThrough Hole58 W- 55 C+ 175 C600 - 650V Igbts
IGP50N60T


Transistor: IGBT; 600V; 50A; 333W; TO220-3
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Infineon 9
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AUD 2.3257
Multiples of: 1

      333 W         
IKW50N65WR5XKSA1


IGBT Transistors The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance techno
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Infineon 9
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AUD 7.2882
Multiples of: 1

Single650 V1.4 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole282 W- 40 C+ 175 CTrenchstop 5 Wr5
IXGP30N120B3


IGBT Transistors 30 Amps 1200V
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IXYS 8
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AUD 9.8824
Multiples of: 1

         TubeSi    Ixgp30n120
STGWA40H65DFB2


IGBT Transistors Trench gate field-stop 650 V 40 A high-speed HB2 series IGBT in a TO-247 long leads package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 2.8531
Multiples of: 1

Single650 V1.55 V20 V72 A250 nA  TO - 247 - 3TubeSiThrough Hole230 W- 55 C+ 175 C 
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