IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...96979899100...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IHW15N120E1XKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 18
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AUD 2.72
Multiples of: 1

Single1.2 kV1.5 V+/- 20 V30 A100 nA  TO - 247 - 3TubeSiThrough Hole156 W- 40 C+ 150 C 
STGP20H60DF


STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT
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STMicroelectronics 18
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AUD 3.3868
Multiples of: 1

Single600 V2 V20 V40 A250 nA  TO - 220TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
IXGH32N170


IGBT Transistors 72 Amps 1700 V 3.3 V Rds
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IXYS 18
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AUD 27.2781
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Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh32n170
STGW25M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 17
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AUD 12.1701
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Single1200 V1.85 V20 V50 A250 nA  TO - 247 - 3TubeSiThrough Hole326 W- 55 C+ 175 C900 - 1300V Igbts
IGW50N65H5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon 17
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AUD 12.3344
Multiples of: 1

Single650 V1.65 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole305 W- 40 C+ 175 CTrenchstop 5 H5
IXBT16N170AHV


IGBT Transistors Disc IGBT BiMosfet-High Volt TO-268AA
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IXYS 17
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AUD 19.48
Multiples of: 1

Single1.7 kV6 V20 V16 A100 nA  TO - 268HV - 2 SiSmd/Smt150 W- 55 C+ 150 C 
IXGT10N170


IGBT Transistors 20 Amps 1700 V 4 V Rds
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IXYS 17
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AUD 19.69
Multiples of: 1

Single1.7 kV2.7 V20 V20 A100 nA  TO - 268 - 3TubeSiSmd/Smt110 W- 55 C+ 150 CIxgt10n170
IXYX120N120B3


IGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
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IXYS 17
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AUD 46.76
Multiples of: 1

Single1.2 kV1.8 V20 V320 A200 nA  PLUS - 247 - 3 SiThrough Hole1.5 kW- 55 C+ 175 C 
2MBI450VH-120-50


IGBT Transistors / Modules ROHS
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Fuji 17
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AUD 170.6957
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MSG30T65HHT1


30A 650V TO-220F IGBT Transistors / Modules ROHS
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MASPOWER 16
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AUD 1.6226
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First...96979899100...

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