IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...96979899100...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKA08N65F5


Transistor: IGBT; 650V; 10.8A; 31.2W; TO220FP; Series: F5
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Infineon 436
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AUD 1.3629
Multiples of: 1

      31.2 W   Trenchstop 5    F5
NGTB35N65FL2WG


ON Semiconductor IGBT Transistors 650V35A FAST IGBT FSII T
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ON Semiconductor 232
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AUD 4.8377
Multiples of: 240

Single650 V2.2 V20 V70 A200 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 175 C 
IXBT16N170A


IGBT Transistors 1700V 16A
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IXYS 7
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AUD 21.0933
Multiples of: 1

Single1700 V 20 V    TO - 268 - 3TubeSiSmd/Smt150 W- 55 C+ 150 CIxbt16n170
DDB6U180N16RRB37BOSA1


IGBT Transistors LOW POWER ECONO
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Infineon 7
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AUD 210.4423
Multiples of: 1

         Tray      
RGT30NS65DGTL


ROHM Semiconductor IGBT Transistors
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ROHM 6
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AUD 2.0862
Multiples of: 1

 650 V1.65 V+/- 30 V30 A+/- 200 nA  TO - 263 - 3ReelSiSmd/Smt133 W- 40 C+ 175 CRgt30ns65d
IXBX75N170A


IGBT Transistors 65Amps 1700V
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IXYS 6
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AUD 50.8293
Multiples of: 1

        PLUS 247 - 3TubeSiThrough Hole   Ixbx75n170
IKP15N60T


IGBT Transistors LOW LOSS DuoPack 600V 15A
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Infineon 5
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AUD 1.0968
Multiples of: 1

Single600 V1.5 V+/- 20 V26 A100 nA  TO - 220 - 3TubeSiThrough Hole110 W- 40 C+ 150 CIkp15n60
RGT00TS65DGC11


IGBT Transistors 650V 50A Trench IGBT Field Stop TO-247N
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ROHM 5
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AUD 5.6955
Multiples of: 1

Single650 V1.65 V+/- 30 V85 A200 nA  TO - 247N - 3Tube Through Hole277 W- 40 C+ 175 C 
RGTV00TK65DGC11


IGBT Transistors 650V 50A TO-3PFM Field Stp Trnch IGBT
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ROHM 5
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AUD 7.1821
Multiples of: 1

Single650 V1.5 V30 V45 A200 nA  TO - 3PFMTubeSiThrough Hole94 W- 40 C+ 175 C 
STGWA15H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 4.6071
Multiples of: 600

Single1200 V2.5 V20 V30 A+/- 250 nA    SiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
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First...96979899100...

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