IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...96979899100...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH40T120SMD-F155


TO-247-3 IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 32
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AUD 23.1824
Multiples of: 1

Single1200 V2 V25 V80 A400 nA  TO - 247G03 - 3TubeSiThrough Hole555 W- 55 C+ 175 CFgh40t120smd
IXBN42N170A


IGBT Transistors 42 Amps 1700V 6.0 V Rds
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IXYS 3
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AUD 71.7912
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Single1700 V 20 V    SOT - 227B - 4TubeSiSmd/Smt - 55 C+ 150 CIxbn42n170
FF300R17ME4PB11BPSA1


IGBT Transistors MEDIUM POWER ECONO
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Infineon 3
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AUD 511.203
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         Tray      
IXYH40N120C3


IGBT Transistors GenX3 1200V XPT IGBT
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IXYS 2
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AUD 10.0886
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Single1200 V3.6 V30 V70 A100 nA  TO - 247AD - 3TubeSiThrough Hole577 W- 55 C+ 175 CIxyh40n120
IHW40N65R5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5
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Infineon 1
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AUD 2.3257
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Single650 V1.35 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole230 W- 40 C+ 175 CTrenchstop 5 Rc - H
IKB30N65EH5ATMA1


IGBT Transistors Infineon s 650 V 30 A hard-switching TRENCHSTOP 5 IGBT in a TO263 D2Pak package redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT i
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Infineon 1
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AUD 2.42
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Single650 V1.65 V20 V55 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt188 W- 40 C+ 175 C650V Trenchstop 5
STGW20V60DF


STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT
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STMicroelectronics 1
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AUD 2.5771
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Single600 V2.3 V20 V40 A250 nA  TO - 247Tube Through Hole167 W- 55 C+ 175 C600 - 650V Igbts
STGWA30H65DFB


IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package
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STMicroelectronics 1
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AUD 5.6618
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Single650 V1.55 V20 V60 A250 nA  TO - 247 - 3 SiThrough Hole260 W- 55 C+ 175 CStgwa30h65dfb
FGH60N60SMD_F085


IGBT Transistors 600V/60A Field Stop IGBT Gen 2
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ON Semiconductor 1
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AUD 6.875
Multiples of: 1

Single600 V2.14 V+/- 20 V120 A400 nA600 W TO - 247 - 3TubeSiThrough Hole600 W- 55 C+ 175 CFgh60n60
STGFW20H65FB


STMicroelectronics IGBT Transistors
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STMicroelectronics 1
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AUD 1.8386
Multiples of: 1

Single650 V1.55 V20 V40 A250 nA  TO - 3PFTubeSiThrough Hole52 W- 55 C+ 175 C600 - 650V Igbts
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First...96979899100...

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