IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...9192939495...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
EG2181


IGBT SOP-8 RoHS
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AUD 0.0155
Multiples of: 1

                
KWBW25N120F4EG


IGBTs TO-247 RoHS
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AUD 0.0155
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KWKFF450R12SC


IGBTs M2 RoHS
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JUNSHINE 0
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AUD 0.0155
Multiples of: 1

                
STGP30H65F


IGBT Transistors Trench gte FieldStop IGBT 600V 30A
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STMicroelectronics 0
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AUD 0.115
Multiples of: 1

Single650 V2.4 V+/- 20 V60 A250 nA260 W TO - 220 - 3TubeSiThrough Hole260 W- 55 C+ 175 CStgp30h65f
5302DG-AA3-R


SOT-223 IGBTs ROHS
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Unisonic 0
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AUD 0.1151
Multiples of: 5

                
TIG065E8-TL-H


IGBT Transistors HIGH POWER SWITCHING
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 0.157
Multiples of: 1

Single Quad Collector Triple Emitter400 V4.2 V+/- 4 V150 A10 uA  ECH - 8Reel Smd/Smt - 40 C+ 150 CTig065e8
IRGR4610DPBF


IGBT Transistors 600V TRENCH ULTRAFAST IGBT
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Infineon 0
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AUD 0.2227
Multiples of: 1

Single600 V1.7 V20 V16 A100 nA77 W DPAKTubeSiSmd/Smt77 W- 40 C+ 175 C 
NGTB15N60EG


IGBT Transistors 15A 600V IGBT
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ON Semiconductor 0
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AUD 0.2952
Multiples of: 1

 600 V1.95 V20 V30 A100 nA47 W TO - 220TubeSiThrough Hole47 W  Ngtb15n60eg
NGTB10N60FG


IGBT Transistors IGBT N-Channel, 600V, 10A, VCE(sat)=1.5V, TO-220F-3FS
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ON Semiconductor 0
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AUD 0.3322
Multiples of: 1

         TubeSi    Ngtb10n60fg
NGTB03N60R2DT4G


ON Semiconductor IGBT Transistors RC2 IGBT 3A 600V DPAK
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ON Semiconductor 0
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AUD 0.3357
Multiples of: 1

Single600 V1.7 V+/- 20 V9 A+/- 100 nA  DPAK - 3ReelSiSmd/Smt49 W + 175 C 
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First...9192939495...

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