IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8687888990...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NGTB75N60SWG


ON Semiconductor IGBT Transistors FSII 75A 600V Welding
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ON Semiconductor 11
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AUD 5.9016
Multiples of: 1

Single600 V1.7 V+/- 20 V100 A200 nA  TO - 247 - 3TubeSiThrough Hole595 W- 55 C+ 175 C 
IXGH30N60BD1


IGBT Transistors 60 Amps 600V 1.8 Rds
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IXYS 11
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AUD 18.3532
Multiples of: 1

Single600 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxgh30n60
RGCL60TK60DGC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 10
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AUD 6.4286
Multiples of: 1

Single600 V1.4 V30 V30 A200 nA  TO - 3PFMTubeSiThrough Hole54 W- 40 C+ 175 C 
IXBF20N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS 10
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AUD 113.0444
Multiples of: 1

Single3 kV2.7 V+/- 20 V34 A   ISOPLUS - I4 - 3TubeSiThrough Hole150 W- 55 C+ 150 C 
VS-GP300TD60S


IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT
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Vishay 10
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AUD 303.52
Multiples of: 1

Dual600 V-20 V580 A+/- 500 nA  DIAP SiChassis1.136 kW- 40 C+ 150 C 
STGFW30V60DF


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
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STMicroelectronics 9
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AUD 2.3397
Multiples of: 1

Single600 V1.85 V+/- 20 V60 A250 nA  TO - 3PFTubeSiThrough Hole58 W- 55 C+ 175 C600 - 650V Igbts
IKW50N65F5FKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon 9
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AUD 2.4299
Multiples of: 1

Single650 V1.6 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole305 W- 40 C+ 175 CIkw50n65
NGTB40N65FL2WG


ON Semiconductor IGBT Transistors 650V40A FAST IGBT FSII T
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ON Semiconductor 9
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AUD 4.3614
Multiples of: 1

Single650 V2.1 V20 V80 A200 nA  TO - 247 - 3TubeSiThrough Hole366 W- 55 C+ 175 C 
AUIRGSL4062D1


IGBT Transistors Automotive 600V 24A T in a D2PAK
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Infineon 8
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AUD 8.1111
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       Aec - Q101TO - 262 - 3TubeSiThrough Hole    
APT30N60BC6


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip 8
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AUD 17.4889
Multiples of: 1

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First...8687888990...

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