IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8687888990...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW40N65H5FKSA1


Transistor: IGBT; 650V; 74A; 250W; TO247-3; Series: H5
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Infineon 183
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AUD 3.2838
Multiples of: 1

      250 W   Trenchstop 5    H5
FGH60N60SFTU


IGBT Transistors N-CH / 600V 60A/ FS
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ON Semiconductor 60
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AUD 5.5
Multiples of: 1

Single600 V +/- 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh60n60
IXXK300N60B3


IGBT Transistors XPT 600V IGBT 300A
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IXYS 60
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AUD 43.8544
Multiples of: 1

         TubeSi    Ixxk300n60
FGH40T65UQDF-F155


IGBT Transistors 650V FS4 Trench IGBT
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ON Semiconductor 59
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AUD 3.3471
Multiples of: 1

Single650 V1.33 V+/- 20 V80 A400 nA  TO - 247 - 3  Through Hole231 W- 55 C+ 175 C 
IXYX100N120C3


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS 59
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AUD 36.96
Multiples of: 1

Single1200 V2.9 V30 V188 A100 nA  TO - 247PLUS - 3TubeSiThrough Hole1150 W- 55 C+ 175 CIxyx100n120c3
STGF3NC120HD


STMicroelectronics IGBT Transistors N-Ch 1200 Volt 3 Amp
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STMicroelectronics 58
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AUD 2.6147
Multiples of: 1

Single1200 V2.8 V+/- 20 V6 A+/- 100 nA  TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 C900 - 1300V Igbts
SPT25N120U1


TO-247-3 IGBTs ROHS
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SPTECH 58
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AUD 1.7716
Multiples of: 1

                
IGW40N60H3FKSA1


IGBT Transistors INDUSTRY 14
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Infineon 58
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AUD 3.2256
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IGW50N65F5


Transistor: IGBT; 650V; 80A; 270W; TO247-3; Series: F5
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Infineon 56
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AUD 4.55
Multiples of: 1

      270 W   Trenchstop 5    F5
STGW40H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
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STMicroelectronics 48
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AUD 9.0907
Multiples of: 1

Single1200 V2.1 V20 V80 A250 nA468 W TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 CStgw40h120df2
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First...8687888990...

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