IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8687888990...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGP10M65DF2


STMicroelectronics IGBT Transistors
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STMicroelectronics 25
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AUD 1.9015
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         TubeSi    600 - 650V Igbts
BGH50N65ZF1


Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
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BASiC Semiconductor 25
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AUD 16.1111
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      357 W   Trench, Field Stop, SiC SBD     
IHW30N135R5


IGBT Transistors HOME APPLIANCES 14
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Infineon 24
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AUD 2.8821
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IHW20N120R5XKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 24
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AUD 5.577
Multiples of: 1

        TO - 247 - 3TubeSi    Rc
MSG30T65FT


TO-220 IGBT Transistors / Modules ROHS
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MASPOWER 23
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AUD 1.2131
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NGTB15N135IHRWG


Trans IGBT Chip N-CH 1.35KV 30A 3-Pin(3+Tab) TO-247 Rail
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ON Semiconductor 23
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AUD 3.1194
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Single        Rail/TubeSi    Ngtb15n135ihr
STGWA30H65DFB


IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package
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STMicroelectronics 22
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AUD 5.7556
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Single650 V1.55 V20 V60 A250 nA  TO - 247 - 3 SiThrough Hole260 W- 55 C+ 175 CStgwa30h65dfb
IXBT24N170


IGBT Transistors BiMOSFETs/Reverse Conducting IGBTs
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IXYS 22
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AUD 48.1556
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        TO - 268 - 2TubeSiThrough Hole   Ixbt24n170
STGWA40H65DFB2


IGBT Transistors Trench gate field-stop 650 V 40 A high-speed HB2 series IGBT in a TO-247 long leads package
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STMicroelectronics 21
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AUD 5.1403
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Single650 V1.55 V20 V72 A250 nA  TO - 247 - 3TubeSiThrough Hole230 W- 55 C+ 175 C 
IXGT60N60C3D1


IGBT Transistors 60 Amps 600V
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IXYS 20
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AUD 10.1556
Multiples of: 1

         TubeSi    Ixgt60n60
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First...8687888990...

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