IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8182838485...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IHW30N160R5XKSA1


IGBT Transistors HOME APPLIANCES 14
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Infineon 46
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AUD 4.4
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Single1600 V1.85 V20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole263 W- 40 C+ 175 C 
STGF10NC60KD


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics 45
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AUD 1.324
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Single600 V2 V+/- 20 V 100 nA25 W TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 CStgf10nc60kd
STGFW20V60DF


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
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STMicroelectronics 45
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AUD 2.0271
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Single600 V1.8 V+/- 20 V40 A250 nA  TO - 3PFTubeSiThrough Hole52 W- 55 C+ 175 C600 - 650V Igbts
IHW20N120R5XKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 45
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AUD 5.04
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        TO - 247 - 3TubeSi    Rc
GT50JR21(STA1,E,S)


Transistor: IGBT; 600V; 49A; 230W; TO3PN
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Toshiba 45
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AUD 5.6571
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      230 W         
IXBH16N170


Trans IGBT Chip N-CH 1.7KV 40A 3-Pin(3+Tab) TO-247AD
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IXYS 45
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AUD 20.4286
Multiples of: 1

Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole150 W- 55 C+ 150 CIxbh16n170
GT15J341,S4X(S


Transistor: IGBT; 600V; 15A; 30W; TO220FP
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Toshiba 44
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AUD 2.4
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      30 W         
IKQ120N60TXKSA1


Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
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Infineon 43
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AUD 10.3557
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      833 W   Trenchstop     
AOK20B60D1


Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
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Alpha & Omega 42
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AUD 3.72
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  1.85 V   83 W         
STGW40NC60KD


IGBT Transistors 40A - 600V Short circuit rugged IGBT
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STMicroelectronics 41
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AUD 7.18
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Single600 V +/- 20 V  250 W TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 CStgw40nc60kd
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First...8182838485...

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