IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8182838485...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKP15N60T


IGBT Transistors LOW LOSS DuoPack 600V 15A
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Infineon 28
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AUD 1.0848
Multiples of: 1

Single600 V1.5 V+/- 20 V26 A100 nA  TO - 220 - 3TubeSiThrough Hole110 W- 40 C+ 150 CIkp15n60
DG120X07T2


Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
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STARPOWER 28
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AUD 17.1556
Multiples of: 1

      893 W         
IXBT10N170


IGBT Transistors 10 Amps 1700V 2.3 Rds
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IXYS 28
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AUD 17.8667
Multiples of: 1

Single1.7 kV3.4 V20 V20 A100 nA  TO - 268 - 3TubeSiSmd/Smt140 W- 55 C+ 150 CIxbt10n170
IXGH48N60B3C1


IGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A
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IXYS 28
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AUD 44.9333
Multiples of: 1

 600 V1.8 V+/- 20 V75 A100 nA  TO - 247AD - 3TubeSicThrough Hole300 W- 55 C+ 150 CIxgh48n60
IXYH30N120C3D1


IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
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IXYS 27
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AUD 12.0302
Multiples of: 1

Single1200 V3.7 V30 V66 A100 nA  TO - 247AD - 3TubeSiThrough Hole416 W- 55 C+ 150 CIxyh30n120
STGY80H65DFB


IGBT Transistors Trench gte FieldStop IGBT 650V 80A
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STMicroelectronics 27
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AUD 14.1603
Multiples of: 1

Single650 V1.9 V+/- 20 V120 A250 nA469 W MAX247 - 3TubeSiThrough Hole469 W- 55 C+ 175 CStgy80h65
IXBH10N300HV


IGBT Transistors Disc IGBT BiMSFT-VeryHiVolt TO-247AD
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IXYS 27
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AUD 23.3286
Multiples of: 1

Single3 kV2.2 V20 V34 A100 nA  TO - 247HV - 3 SiThrough Hole180 W- 55 C+ 150 C 
IXYX30N170CV1


IGBT Transistors 1700V/108A High Voltage XPT IGBT
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IXYS 27
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AUD 38.4355
Multiples of: 1

Single1700 V3 V20 V108 A100 nA  TO - 247PLUS - 3TubeSiThrough Hole937 W- 55 C+ 175 C 
STGF20NB60S


STMicroelectronics IGBT Transistors N Ch 13A-600V
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STMicroelectronics 26
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AUD 1.5121
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Single600 V +/- 20 V    TO - 220 - 3 FPTubeSiThrough Hole - 55 C+ 150 C600 - 650V Igbts
DG75H12T2


Transistor: IGBT; 1.2kV; 75A
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STARPOWER 26
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AUD 13.1111
Multiples of: 1

                
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First...8182838485...

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