IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8182838485...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGW30N60TPXKSA1


Transistor: IGBT; 600V; 38A; 100W; TO247-3
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Infineon 30
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AUD 1.2396
Multiples of: 1

      100 W   Trenchstop     
IXYY8N90C3


IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3
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IXYS 30
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AUD 2.2
Multiples of: 1

Single900 V2.5 V20 V20 A100 nA  TO - 252 - 3TubeSiSmd/Smt - 55 C+ 175 CPlanar
STGW30NC60VD


STMicroelectronics IGBT Transistors PowerMESH
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STMicroelectronics 30
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AUD 2.7754
Multiples of: 1

Single600 V2.5 V+/- 20 V +/- 100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C600 - 650V Igbts
IHW40N60RFKSA1


IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
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Infineon 30
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AUD 4.0163
Multiples of: 1

Single600 V1.65 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole305 W- 40 C+ 175 CRc
IXGH6N170A


IGBT Transistors 12 Amps 1700 V 7 V Rds
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IXYS 30
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AUD 5.6017
Multiples of: 1

Single1.7 kV5.4 V+/- 20 V6 A100 nA  TO - 247AD - 3TubeSiThrough Hole75 W- 55 C+ 150 CIxgh6n170
APT35GA90B


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
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Microchip 29
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AUD 7.2984
Multiples of: 1

         TubeSi     
BGH40N120HS1


Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
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BASiC Semiconductor 29
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AUD 13.7333
Multiples of: 1

          Trench, Field Stop, SiC SBD     
BGH75N65ZF1


Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
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BASiC Semiconductor 29
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AUD 17.8
Multiples of: 1

      405 W   Trench, Field Stop, SiC SBD     
IXYX120N120B3


IGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
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IXYS 29
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AUD 56.3778
Multiples of: 1

Single1.2 kV1.8 V20 V320 A200 nA  PLUS - 247 - 3 SiThrough Hole1.5 kW- 55 C+ 175 C 
MSG60T65HHC0


60A 650V TO-247 IGBT Transistors / Modules ROHS
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MASPOWER 0
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AUD 2.7837
Multiples of: 1

                
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First...8182838485...

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