IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8182838485...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
SPT25N120U1


TO-247-3 IGBTs ROHS
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SPTECH 58
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AUD 2.4441
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KGF60N65KDF-U/H


TO-247 IGBTs ROHS
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KEC 58
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AUD 2.7309
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STGD25N40LZAG


IGBT Transistors Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ
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STMicroelectronics 58
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AUD 3.0381
Multiples of: 1

 400 V1.25 V16 V25 A625 uA Aec - Q101DPAK - 3  Smd/Smt150 W- 55 C+ 175 CStgd25n40lzag
MSG100T120FQC1


TO-247Plus IGBT Transistors / Modules ROHS
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MASPOWER 58
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AUD 14.0606
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IGZ75N65H5XKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 57
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AUD 5.0914
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         Tube      
DG75X12T2


Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
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STARPOWER 56
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AUD 14.5
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      852 W         
STGP3NC120HD


STMicroelectronics IGBT Transistors 7A 1200 V Very Fast IGBT Power Bipolar
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STMicroelectronics 55
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AUD 2
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Single 2.2 V20 V14 A100 nA  TO - 220 - 3TubeSiThrough Hole75 W- 55 C+ 150 C900 - 1300V Igbts
BGH50N65HF1


Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
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BASiC Semiconductor 55
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AUD 16.68
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      357 W   Trench, Field Stop, SiC SBD     
IXGH6N170A


IGBT Transistors 12 Amps 1700 V 7 V Rds
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IXYS 54
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AUD 5.7693
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Single1.7 kV5.4 V+/- 20 V6 A100 nA  TO - 247AD - 3TubeSiThrough Hole75 W- 55 C+ 150 CIxgh6n170
IXGH40N120B2D1


IGBT Transistors IGBT, Diode 1200V, 75A
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IXYS 54
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AUD 20.1929
Multiples of: 1

Single1.2 kV2.9 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole380 W- 55 C+ 150 CIxgh40n120
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First...8182838485...

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