IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...8182838485...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKA15N60T


IGBT Transistors LOW LOSS DuoPack 600V 15A
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Infineon 64
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AUD 1.5369
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Single600 V1.5 V+/- 20 V18.3 A100 nA  TO - 220 - 3TubeSiThrough Hole35.7 W- 40 C+ 150 CIka15n60
STGP19NC60HD


IGBT Transistors 19 A - 600 V very fast IGBT
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STMicroelectronics 64
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AUD 3.64
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Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CStgp19nc60hd
STGW19NC60HD


STMicroelectronics IGBT Transistors 19 A - 600 V Very fast IGBT
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STMicroelectronics 64
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AUD 4.58
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Single600 V +/- 20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 C600 - 650V Igbts
STGW40H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
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STMicroelectronics 64
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AUD 9.8
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Single1200 V2.1 V20 V80 A250 nA468 W TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 CStgw40h120df2
FGH60N60SFTU


IGBT Transistors N-CH / 600V 60A/ FS
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ON Semiconductor 60
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AUD 5.5
Multiples of: 1

Single600 V +/- 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh60n60
GT40WR21,Q(O


Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
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Toshiba 60
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AUD 16.28
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      375 W         
FGH40T65UQDF-F155


IGBT Transistors 650V FS4 Trench IGBT
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ON Semiconductor 59
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AUD 3.3471
Multiples of: 1

Single650 V1.33 V+/- 20 V80 A400 nA  TO - 247 - 3  Through Hole231 W- 55 C+ 175 C 
STGWA25M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 59
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AUD 6.58
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Single1.2 kV1.85 V20 V50 A250 nA  TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
IKQ75N120CH3


IGBT Transistors INDUSTRY 14
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Infineon 59
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AUD 8.4824
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IXBH2N250


IGBT Transistors Disc IGBT BiMSFT-VeryHiVolt TO-247AD
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IXYS 59
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AUD 11.8643
Multiples of: 1

                
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First...8182838485...

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