IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...7172737475...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW60N60H3


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop
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Infineon 105
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AUD 5.7829
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Single600 V1.85 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole416 W- 40 C+ 175 CHighspeed 3
STGWA80H65DFB


STMicroelectronics IGBT Transistors
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STMicroelectronics 104
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AUD 5.1364
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Single650 V2 V+/- 20 V120 A250 nA  TO - 247 - 3 SiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
MLG50T65FUK


300W 50A 650V FS(Field Stop) TO-247 IGBT Transistors / Modules ROHS
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Minos 103
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AUD 1.6623
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IXGH48N60A3


IGBT Transistors 75 Amps 600V 1.05 V Rds
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IXYS 103
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AUD 5.3743
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Single600 V1.18 V20 V120 A100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh48n60
IKW08T120FKSA1


Transistor: IGBT; 1.2kV; 8A; 70W; TO247-3
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Infineon 102
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AUD 2.7186
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      70 W   Trenchstop     
IGW25N120H3


Transistor: IGBT; 1200V; 50A; 326W; TO247-3; Series: H3
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Infineon 102
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AUD 6.66
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      326 W   Trenchstop 3    H3
IXYP8N90C3D1


IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs
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IXYS 101
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AUD 5.24
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Single900 V2.15 V30 V20 A100 nA  TO - 220 - 3TubeSiThrough Hole125 W- 55 C+ 175 CIxyp8n90
IHW20N135R5F


333W 40A 1.35kV TO-247-3 IGBTs ROHS
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FUXINSEMI 100
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AUD 1.7762
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STGWA75M65DF2


IGBT Transistors PTD HIGH VOLTAGE
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STMicroelectronics 99
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AUD 8.02
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Single650 V1.65 V20 V120 A+/- 250 uA  TO - 247 - 3 SiThrough Hole488 W- 55 C+ 175 CStgwa75m65df2
IGW08T120


Transistor: IGBT; 1200V; 8A; 70W; TO247-3
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Infineon 98
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AUD 1.5323
Multiples of: 1

      70 W         
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First...7172737475...

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