IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...7172737475...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
DG25X12T2


TO-247AD IGBTs ROHS
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STARPOWER 96
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AUD 5.5164
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STGW80V60F


STMicroelectronics IGBT Transistors
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STMicroelectronics 96
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AUD 5.6397
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Single600 V1.85 V20 V120 A250 nA  TO - 247 - 3TubeSiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
APT20GF120BRDG


IGBT Transistors FG, IGBT, 1200V, 20A, TO-247, RoHS
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Microchip 95
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AUD 11.5238
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          NPT     
STGF3NC120HD


STMicroelectronics IGBT Transistors N-Ch 1200 Volt 3 Amp
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STMicroelectronics 93
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AUD 2.4985
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Single1200 V2.8 V+/- 20 V6 A+/- 100 nA  TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 C900 - 1300V Igbts
IGB50N60TATMA1


Trans IGBT Chip N-CH 600V 90A 3-Pin(2+Tab) D2PAK
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Infineon 92
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AUD 2.4627
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Single600 V1.5 V+/- 20 V90 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt333 W- 40 C+ 175 CTrenchstop Igbt
APT50GN60BG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip 90
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AUD 15.3333
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Single600 V1.5 V30 V107 A600 nA366 W TO - 247 - 3TubeSiThrough Hole366 W- 55 C+ 175 C 
Hot IKW40N65ES5


IGBT Transistors Trenchstop 5 IGBT
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Infineon 89
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AUD 1.7911
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Single650 V1.35 V+/- 2079 A100 nA  TO - 247 - 3TubeSiThrough Hole230 W- 40 C+ 175 CTrenchstop 5 S5
IRG6IC30UPBF


IGBT Transistors 300V Plasma Display Panel (PDP)
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Infineon 89
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AUD 3.9286
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Single600 V1.92 V+/- 30 V25 A 37 W TO - 220 - 3 FPTubeSiThrough Hole37 W- 40 C  
FGH40T65UQDF-F155


IGBT Transistors 650V FS4 Trench IGBT
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ON Semiconductor 88
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AUD 3.719
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Single650 V1.33 V+/- 20 V80 A400 nA  TO - 247 - 3  Through Hole231 W- 55 C+ 175 C 
IKW40N120CS6XKSA1


Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
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Infineon 88
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AUD 4.6175
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      250 W   Trenchstop 6     
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First...7172737475...

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