IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...7172737475...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AOK40B65H1


Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
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Alpha & Omega 114
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AUD 5.38
Multiples of: 1

  1.9 V   150 W         
MBQ60T65PESTH


TO-247 IGBTs ROHS
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Magnachip 112
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AUD 2.165
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IXA12IF1200PB


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS 112
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AUD 7.81
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Single1200 V1.8 V20 V20 A500 nA  TO - 220 - 3TubeSiThrough Hole85 W- 55 C+ 150 CIxa12if1200
STGWA40H65DFB2


IGBT Transistors Trench gate field-stop 650 V 40 A high-speed HB2 series IGBT in a TO-247 long leads package
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STMicroelectronics 111
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AUD 4.78
Multiples of: 1

Single650 V1.55 V20 V72 A250 nA  TO - 247 - 3TubeSiThrough Hole230 W- 55 C+ 175 C 
IXBH16N170A


IGBT Transistors 1700V 16A
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IXYS 111
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AUD 22.22
Multiples of: 1

Single1700 V 20 V    TO - 247 - 3TubeSiThrough Hole150 W- 55 C+ 150 CIxbh16n170
GT40QR21(STA1,E,D


IGBT Transistors LOW SATURATIONFAST SWITCHING
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Toshiba 110
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AUD 4.76
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         Tube      
STGWT80V60F


STMicroelectronics IGBT Transistors
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STMicroelectronics 109
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AUD 4.2743
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Single600 V1.85 V20 V120 A250 nA  TO - 3PTubeSiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
MLG40N65FUK


40A 650V FS(Field Stop) TO-247 IGBT Transistors / Modules ROHS
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Minos 107
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AUD 1.6856
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FGA30S120P


IGBT Transistors Shorted AnodeTM IGBT
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ON Semiconductor 107
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AUD 5.9243
Multiples of: 1

Single1300 V2.3 V25 V60 A500 nA  TO - 3PNTubeSiThrough Hole174 W- 55 C+ 175 CFga30s120p
IKW15N120H3


Transistor: IGBT; 1200V; 30A; 217W; TO247-3; Series: H3
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Infineon 106
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AUD 2.86
Multiples of: 1

      217 W   Trenchstop 3    H3
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First...7172737475...

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