IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...7172737475...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IHW30N160R5


IGBT Transistors HOME APPLIANCES 14
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Infineon 249
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AUD 4.6164
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IKW50N60DTP


IGBT Transistors INDUSTRY 14
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Infineon 144
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AUD 3.8679
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NGTB20N120IHRWG


IGBT Transistors 1200V/20A RC IGBT FSII
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ON Semiconductor 138
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AUD 4.4866
Multiples of: 1

Single1200 V2.1 V20 V40 A100 nA384 W TO - 247TubeSiThrough Hole384 W- 55 C+ 175 CNgtb20n120ihr
AOK40B65H1


Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
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Alpha & Omega 137
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AUD 5.4971
Multiples of: 1

  1.9 V   150 W         
IGB10N60T


Infineon Technologies IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech
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Infineon 137
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AUD 0.7747
Multiples of: 1

Single600 V2.05 V20 V20 A100 nA  PG - TO - 263 - 3ReelSiSmd/Smt110 W- 40 C+ 175 CIgb10n60
IXYA20N65C3D1


IGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
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IXYS 136
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AUD 4.72
Multiples of: 1

Single650 V2.27 V20 V50 A100 nA  TO - 263AA - 3 SiSmd/Smt200 W- 55 C+ 175 C 
IXYH60N90C3


IGBT Transistors 900V 60A 2.7V XPT IGBT GenX3
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IXYS 136
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AUD 9.9471
Multiples of: 1

Single900 V2.7 V20 V140 A100 nA  TO - 247AD - 3TubeSiThrough Hole - 55 C+ 175 CPlanar
AOK50B65H1


Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ
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Alpha & Omega 135
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AUD 5.208
Multiples of: 1

  1.9 V   188 W         
STGWT40HP65FB


IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
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STMicroelectronics 134
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AUD 3.9735
Multiples of: 1

Single650 V1.6 V+/- 30 V80 A+/- 250 nA  TO - 3P - 3 SiThrough Hole283 W- 55 C+ 175 C 
IHW25N120E1XKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 20
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AUD 4.1588
Multiples of: 1

Single1.2 kV1.5 V+/- 20 V50 A100 nA  TO - 247 - 3TubeSiThrough Hole231 W- 40 C+ 150 C 
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First...7172737475...

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