IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...6667686970...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH40T120SMD


Transistor: IGBT; 1.2kV; 40A; 277W; TO247
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ON Semiconductor 2007
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AUD 8.6716
Multiples of: 1

      277 W         
FGH40N60UFDTU


Transistor: IGBT; 600V; 40A; 116W; TO247
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ON Semiconductor 233
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AUD 4.0765
Multiples of: 1

      116 W         
IKW30N65ET7


TO-247-3 IGBTs ROHS
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Infineon 169
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AUD 6.0982
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IXYA20N120C4HV


IGBT Transistors IGBT 4TH GENERATION GENX4
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IXYS 169
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AUD 12.1154
Multiples of: 1

         Tube      
IGP20N65F5


Transistor: IGBT; 650V; 42A; 125W; TO220-3; Series: F5
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Infineon 167
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AUD 1.0717
Multiples of: 1

      125 W   Trenchstop 5    F5
NGTB60N60SWG


ON Semiconductor IGBT Transistors 600V60A IGBT LPT TO-247
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ON Semiconductor 167
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AUD 5.0443
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Single600 V2.6 V20 V120 A200 nA  TO - 247 - 3Tube Through Hole298 W- 55 C+ 150 C 
IXYH75N65C3H1


IGBT Transistors 650V/170A XPT C3-Class TO-247
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IXYS 166
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AUD 19.5014
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Single650 V1.8 V30 V170 A100 nA  TO - 247AD - 3TubeSiThrough Hole750 W- 55 C+ 175 CIxyh75n65
IGW25N120H3


Transistor: IGBT; 1200V; 50A; 326W; TO247-3; Series: H3
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Infineon 159
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AUD 6.74
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      326 W   Trenchstop 3    H3
IKP20N65H5XKSA1


Transistor: IGBT; 650V; 20A; 125W; TO220-3; Series: H5
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Infineon 152
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AUD 3.136
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      125 W        H5
IXGH6N170A


IGBT Transistors 12 Amps 1700 V 7 V Rds
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IXYS 74
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AUD 7.7472
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Single1.7 kV5.4 V+/- 20 V6 A100 nA  TO - 247AD - 3TubeSiThrough Hole75 W- 55 C+ 150 CIxgh6n170
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