IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXXR110N65B4H1


IGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT
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IXYS 163
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AUD 28.7571
Multiples of: 1

Single650 V1.75 V20 V150 A100 nA  ISOPLUS 247 - 3TubeSiThrough Hole455 W- 55 C+ 175 CIxxr110n65
RGT40NL65DGTL


IGBT Transistors FIELD STOP TRENCH IGBT
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ROHM 162
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AUD 2.6103
Multiples of: 1

Single650 V1.65 V30 V40 A200 nA  TO - 263L - 3Cut TapeSiSmd/Smt161 W- 40 C+ 175 C 
HGTG11N120CND


IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dd
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ON Semiconductor 162
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AUD 4.1221
Multiples of: 1

      298 W         
STGFW20V60DF


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
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STMicroelectronics 161
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AUD 1.9866
Multiples of: 1

Single600 V1.8 V+/- 20 V40 A250 nA  TO - 3PFTubeSiThrough Hole52 W- 55 C+ 175 C600 - 650V Igbts
NGTB50N65FL2WG


IGBTs Trench Field Stop 650V 100A TO-247 RoHS
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ON Semiconductor 159
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AUD 6.7571
Multiples of: 1

                
IXYX110N120B4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
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IXYS 156
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AUD 22.7104
Multiples of: 1

Single1200 V - 30 V , + 30 V340 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 4
IKP20N60H3


IGBT Transistors 600V HI SPEED SW IGBT
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Infineon 155
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AUD 1.2773
Multiples of: 1

Single600 V1.95 V20 V20 A100 nA170 W TO - 220 - 3 FPTubeSiThrough Hole170 W- 40 C+ 175 CIkp20n60
IHW15N120R3FKSA1


Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247
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Infineon 154
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AUD 1.8388
Multiples of: 1

Single1200 V1.48 V+/- 20 V30 A100 nA  TO - 247 - 3TubeSiThrough Hole254 W- 40 C+ 175 CRc
SGW20N60HS


IGBT Transistors HIGH SPEED NPT TECH 600V 20A
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Infineon 153
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AUD 3.8413
Multiples of: 1

Single600 V +/- 20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CSgw20n60
IXXH30N60B3


IGBT Transistors IGBT XPT-GENX3
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IXYS 153
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AUD 4.1866
Multiples of: 1

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