IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGW50N60TFKSA1


IGBT Transistors LOW LOSS IGBT TECH 600V 50A
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Infineon 232
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AUD 2.548
Multiples of: 1

Single600 V1.5 V+/- 20 V90 A100 nA  TO - 247 - 3TubeSiThrough Hole333 W- 40 C+ 175 CXgw50n60
IGW40N65H5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon 177
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AUD 2.7643
Multiples of: 1

Single650 V1.65 V+/- 20 V74 A100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 40 C+ 175 CTrenchstop 5 H5
IGW100N60H3


Transistor: IGBT; 600V; 100A; 714W; TO247-3; Series: H3
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Infineon 177
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AUD 6.3329
Multiples of: 1

      714 W   Trenchstop 3    H3
IXGT30N120B3D1


IGBT Transistors 30 Amps 1200V
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IXYS 176
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AUD 21.1829
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 1200 V3.5 V     TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgt30n120
IXXN110N65B4H1


IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
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IXYS 176
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AUD 36.8186
Multiples of: 1

Single650 V2.1 V30 V215 A100 nA  SOT - 227TubeSiSmd/Smt750 W- 55 C+ 150 CIxxn110n65
IGW25T120FKSA1


Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247
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Infineon 174
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AUD 4.5759
Multiples of: 1

         Tube      
IXYA15N65C3D1


IGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
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IXYS 173
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AUD 3.7676
Multiples of: 1

Single650 V1.96 V20 V38 A100 nA  TO - 263 - 3 SiSmd/Smt200 W- 55 C+ 175 C 
AOTF10B60D2


Transistor: IGBT; 600V; 10A; 12W; TO220F; Eoff: 0.04mJ; Eon: 0.14mJ
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Alpha & Omega 172
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AUD 1.75
Multiples of: 1

  1.55 V   12 W         
IXA12IF1200PB


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS 172
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AUD 6.9457
Multiples of: 1

Single1200 V1.8 V20 V20 A500 nA  TO - 220 - 3TubeSiThrough Hole85 W- 55 C+ 150 CIxa12if1200
STGW20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics 171
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AUD 1.8857
Multiples of: 1

Single600 V1.8 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
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