IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...6162636465...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKFW75N65ES5XKSA1


IGBT Trench Field Stop 650V 80A 148W Through Hole PG-HSIP247-3-2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 174
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AUD 6.9457
Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
IXBF20N360


IGBT Transistors 3600V/45A Reverse Conducting IGBT
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IXYS 173
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AUD 100.43
Multiples of: 1

        ISOPLUS - I4 - PAK - 3TubeSiThrough Hole    
IXYN100N120C3H1


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS 172
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AUD 54.5914
Multiples of: 1

Single1.2 kV2.9 V20 V134 A100 nA  SOT - 227B - 4TubeSiSmd/Smt690 W- 55 C+ 150 CIxyn100n120
IXXH50N60B3D1


IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
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IXYS 171
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AUD 14.8029
Multiples of: 1

 600 V1.55 V20 V120 A100 nA  TO - 247 - 3TubeSiThrough Hole600 W- 55 C+ 175 CIxxh50n60
IXDH20N120


IGBT Transistors 20 Amps 1200V
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IXYS 170
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AUD 9.28
Multiples of: 1

Single1200 V2.4 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxdh20n120
IKQ40N120CT2XKSA1


Transistor: IGBT; 1200V; 40A; 133W; TO247-3
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Infineon 169
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AUD 8.98
Multiples of: 1

      133 W   Trenchstop 2     
IXGH10N170A


IGBT Transistors 20 Amps 1700 V 7 V Rds
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IXYS 169
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AUD 9.3657
Multiples of: 1

Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh10n170
IXGH48N60B3D1


IGBT Transistors 75 Amps 600V 1.05 V Rds
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IXYS 169
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AUD 12.08
Multiples of: 1

Single600 V1.8 V20 V 100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh48n60
IXYA20N120C4HV


IGBT Transistors IGBT 4TH GENERATION GENX4
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IXYS 169
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AUD 12.1154
Multiples of: 1

         Tube      
IGW40N65H5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon 167
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AUD 1.9
Multiples of: 1

Single650 V1.65 V+/- 20 V74 A100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 40 C+ 175 CTrenchstop 5 H5
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First...6162636465...

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