IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...6162636465...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYH20N120C3D1


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS 210
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AUD 8.3896
Multiples of: 1

Single1200 V4 V30 V36 A100 nA  TO - 247AD - 3TubeSiThrough Hole230 W- 55 C+ 150 CIxyh20n120
IKW15N120T2FKSA1


Trans IGBT Chip N-CH 1200V 30A 235000mW 3-Pin(3+Tab) TO-247 Tube
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Infineon 208
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AUD 3.3276
Multiples of: 1

                
AOK50B60D1


Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ
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Alpha & Omega 208
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AUD 6.4831
Multiples of: 1

  1.85 V   125 W         
IXXX160N65B4


IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT
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IXYS 207
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AUD 27.3429
Multiples of: 1

Single650 V1.54 V20 V310 A200 nA  PLUS 247 - 3TubeSiThrough Hole940 W- 55 C+ 175 CIxxx160n65
FGH40N60UFDTU


Transistor: IGBT; 600V; 40A; 116W; TO247
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ON Semiconductor 203
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AUD 2.431
Multiples of: 30

      116 W         
IKW40N60H3FKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 203
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AUD 3.4282
Multiples of: 1

        TO - 247 - 3TubeSi    Highspeed 3
DG50X07T2


Transistor: IGBT; 650V; 50A; 714W; TO247
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STARPOWER 203
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AUD 5.4277
Multiples of: 1

      714 W         
IXA33IF1200HB


IGBT Transistors XPT IGBT Copack
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IXYS 203
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AUD 12.746
Multiples of: 1

Single1200 V1.8 V20 V58 A500 nA  TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxa33if1200hb
IGW50N65F5FKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon 201
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AUD 2.6269
Multiples of: 1

Single650 V1.6 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole305 W- 40 C+ 175 CIgw50n65
AOK30B120D2


Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
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Alpha & Omega 201
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AUD 6.3111
Multiples of: 1

  1.77 V   170 W         
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First...6162636465...

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