IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...6162636465...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RJH60F7DPQ-A0#T0


IGBT Transistors IGBT
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Renesas 194
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AUD 4.5512
Multiples of: 1

         TubeSi     
AFGHL75T65SQD


IGBT Transistors 650V75A FS4 IGBT
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ON Semiconductor 194
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AUD 6.2229
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         Tube      
IXXH100N60B3


IGBT Transistors XPT IGBT B3-Class 600V/210Amp
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IXYS 194
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AUD 13.3729
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 600 V1.8 V20 V210 A100 nA  TO - 247ADTubeSiThrough Hole830 W- 55 C+ 150 CIxxh100n60
IXBX25N250


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS 193
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AUD 73.6843
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Single2.5 kV3.3 V20 V55 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 150 CVery High Voltage
IKWH60N65WR6


TO-247-3 IGBTs ROHS
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Infineon 192
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AUD 3.5555
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GT50JR22(STA1ES)


Toshiba IGBT Transistors IGBT for Soft Switching Apps
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Toshiba 191
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AUD 4.3172
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          Si    Gt50jr22
IXBH32N300


IGBT Transistors Disc IGBT BiMSFT-VeryHiVolt TO-247AD
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IXYS 191
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AUD 99.0786
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         Tube      
IXGN400N60A3


IGBT Transistors 400 Amps 600V
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IXYS 187
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AUD 101.8129
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Single600 V1.25 V20 V400 A400 nA  SOT - 227BTubeSiSmd/Smt830 W- 55 C+ 150 CIxgn400n60
IXYL60N450


IGBT Transistors IGBT XPT-HI VOLTAGE
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IXYS 187
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AUD 172.6843
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         TubeSi    High Voltage
IGW40N65F5FKSA1


Transistor: IGBT; 650V; 74A; 250W; TO247-3; Series: F5
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Infineon 184
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AUD 2.8088
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      250 W   Trenchstop 5    F5
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First...6162636465...

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