IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW25N120T2FKSA1


IGBT Transistors IGBT PRODUCTS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 730
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AUD 4.5653
Multiples of: 1

        TO - 247 - 3TubeSi    Trenchstop 2
IGW60T120FKSA1


Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 1200V 60A
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Infineon 198
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AUD 7.416
Multiples of: 1

Single1200 V1.7 V+/- 20 V100 A600 nA  TO - 247 - 3TubeSiThrough Hole375 W- 40 C+ 150 CXgw60t120
IKW60N60H3


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop
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Infineon 197
Ships to you
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AUD 8.3968
Multiples of: 1

Single600 V1.85 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole416 W- 40 C+ 175 CHighspeed 3
IXGN100N170


IGBT Transistors HIGH VOLT NPT IGBTS 1700V 95A
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IXYS 197
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AUD 72.7397
Multiples of: 1

Single1.7 kV2.5 V20 V160 A200 nA  SOT - 227B - 4TubeSiSmd/Smt735 W- 55 C+ 150 CIxgn100n170
DG10X06T1


Transistor: IGBT; 600V; 19A; 196W; TO220
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STARPOWER 194
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AUD 2.0656
Multiples of: 1

      196 W         
RGTH50TS65DGC11


ROHM Semiconductor IGBT Transistors
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ROHM 194
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AUD 3.9323
Multiples of: 1

 650 V1.6 V+/- 30 V50 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole174 W- 40 C+ 175 CRgth50ts65
GT50JR22(STA1ES)


Toshiba IGBT Transistors IGBT for Soft Switching Apps
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Toshiba 191
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AUD 4.3172
Multiples of: 1

          Si    Gt50jr22
NCE40TD120VT


TO-247 IGBTs ROHS
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NCE Power 191
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AUD 4.9024
Multiples of: 1

                
IGW03N120H2


IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
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Infineon 187
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AUD 3.0206
Multiples of: 1

Single1200 V 20 V    TO - 247 - 3TubeSiThrough Hole - 40 C+ 150 CIgw03n120
RGCL60TK60GC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 184
Ships to you
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AUD 3.0851
Multiples of: 1

Single600 V1.4 V30 V30 A200 nA  TO - 3PFMTubeSiThrough Hole54 W- 40 C+ 175 C 
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