IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...6667686970...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW60N60H3


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 197
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AUD 8.3968
Multiples of: 1

Single600 V1.85 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole416 W- 40 C+ 175 CHighspeed 3
IKW25N120T2FKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 196
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AUD 2.7449
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        TO - 247 - 3TubeSi    Trenchstop 2
IKW15N120H3FKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 194
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AUD 4.3223
Multiples of: 1

Single1200 V2.05 V+/- 20 V30 A600 nA  TO - 247 - 3TubeSiThrough Hole217 W- 40 C+ 175 CXkw15n120
IXBH32N300


IGBT Transistors Disc IGBT BiMSFT-VeryHiVolt TO-247AD
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IXYS 194
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AUD 106.8571
Multiples of: 1

         Tube      
IRGR3B60KD2TRP


International Rectifier IGBT Transistors
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Infineon 194
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AUD 1.6508
Multiples of: 1

Single600 V1.9 V+/- 20 V7.8 A100 nA  DPAK - 3ReelSiSmd/Smt52 W- 55 C+ 150 CRc
RGTH50TS65DGC11


ROHM Semiconductor IGBT Transistors
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ROHM 194
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AUD 3.9323
Multiples of: 1

 650 V1.6 V+/- 30 V50 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole174 W- 40 C+ 175 CRgth50ts65
APT25GT120BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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Microchip 194
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AUD 9.125
Multiples of: 1

Single1.2 kV3.2 V30 V54 A120 nA  TO - 247 - 3TubeSiThrough Hole347 W- 55 C+ 150 C 
IKP20N65H5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5
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Infineon 193
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AUD 1.7757
Multiples of: 1

Single650 V1.65 V20 V42 A100 nA  TO - 220 - 3TubeSiThrough Hole125 W- 40 C+ 175 CTrenchstop 5 H5
MBQ75T65PEHTH


TO-247 IGBTs ROHS
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Magnachip 171
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AUD 2.779
Multiples of: 1

                
IGW30N60H3


Transistor: IGBT; 600V; 30A; 187W; TO247-3
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Infineon 56
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AUD 1.8857
Multiples of: 1

      187 W         
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First...6667686970...

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