IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGP30M65DF2


STMicroelectronics IGBT Transistors
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STMicroelectronics 167
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AUD 2.48
Multiples of: 1

         TubeSi    600 - 650V Igbts
IGW60T120FKSA1


Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 1200V 60A
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Infineon 167
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AUD 7.0982
Multiples of: 1

Single1200 V1.7 V+/- 20 V100 A600 nA  TO - 247 - 3TubeSiThrough Hole375 W- 40 C+ 150 CXgw60t120
IXYH75N65C3H1


IGBT Transistors 650V/170A XPT C3-Class TO-247
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IXYS 166
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AUD 19.25
Multiples of: 1

Single650 V1.8 V30 V170 A100 nA  TO - 247AD - 3TubeSiThrough Hole750 W- 55 C+ 175 CIxyh75n65
IGP40N65H5XKSA1


Transistor: IGBT; 650V; 74A; 250W; TO220-3; Series: H5
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Infineon 165
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AUD 1.6343
Multiples of: 1

      250 W        H5
IKW50N65ES5


IGBT Transistors Trenchstop 5 IGBT
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Infineon 165
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AUD 2.6965
Multiples of: 1

Single650 V1.35 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole274 W- 40 C+ 175 CTrenchstop 5 S5
IKW25N120H3XK


IGBT Transistors IGBT PRODUCTS
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Infineon 163
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AUD 3.8343
Multiples of: 1

         Tube      
NGTB75N65FL2WG


ON Semiconductor IGBT Transistors
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ON Semiconductor 163
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AUD 7.6843
Multiples of: 1

         TubeSi    Ngtb75n65fl2
IKW20N60H3FKSA1


Infineon Technologies IGBT Transistors 600V 20A 170W
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Infineon 162
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AUD 4.3004
Multiples of: 1

Single600 V1.95 V+/- 20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole170 W- 40 C+ 175 CXkw20n60
AOTF10B60D2


Transistor: IGBT; 600V; 10A; 12W; TO220F; Eoff: 0.04mJ; Eon: 0.14mJ
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Alpha & Omega 161
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AUD 1.68
Multiples of: 1

  1.55 V   12 W         
AIGW40N65F5XKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 159
Ships to you
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AUD 8.58
Multiples of: 1

Single650 V1.6 V30 V74 A100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 40 C+ 175 CTrenchstop 5 F5
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