IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...7172737475...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AIGW40N65F5XKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 162
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AUD 8.64
Multiples of: 1

Single650 V1.6 V30 V74 A100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 40 C+ 175 CTrenchstop 5 F5
STGFW20V60DF


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
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STMicroelectronics 161
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AUD 2.0271
Multiples of: 1

Single600 V1.8 V+/- 20 V40 A250 nA  TO - 3PFTubeSiThrough Hole52 W- 55 C+ 175 C600 - 650V Igbts
IXYA20N120B4HV


IGBT Transistors 4TH GENERATION GENX4TRENCH
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IXYS 161
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AUD 6.05
Multiples of: 1

         Tube      
IKFW40N65ES5XKSA1


IGBT Trench Field Stop 650V 60A 106W Through Hole PG-HSIP247-3-2
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Infineon 161
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AUD 6.1914
Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
AOK30B135W1


Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
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Alpha & Omega 159
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AUD 5.6412
Multiples of: 1

  1.8 V   170 W         
AOK75B60D1


Transistor: IGBT; 600V; 75A; 300W; TO247; Eoff: 1.3mJ; Eon: 3.7mJ
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Alpha & Omega 158
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AUD 8.2507
Multiples of: 1

  1.72 V   300 W         
IXYX110N120B4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
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IXYS 156
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AUD 22.7104
Multiples of: 1

Single1200 V - 30 V , + 30 V340 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 4
FGY100T65SCDT


IGBT Transistors FS3TIGBT TO247 100A 650V
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ON Semiconductor 155
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AUD 13.2
Multiples of: 1

Single650 V1.5 V25 V200 A400 nA  TO - 247 - 3TubeSiThrough Hole750 W- 55 C+ 175 C 
AOK75B65H1


Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ
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Alpha & Omega 145
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AUD 6.9588
Multiples of: 1

  1.85 V   278 W         
AOK20B135D1


Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
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Alpha & Omega 144
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AUD 5.376
Multiples of: 1

  1.57 V   170 W         
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First...7172737475...

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