IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...7677787980...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW25S120DF3


STMicroelectronics IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 122
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AUD 9.6643
Multiples of: 1

Single1.2 kV1.6 V+/- 20 V50 A250 nA  TO 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
STGWA75M65DF2


IGBT Transistors PTD HIGH VOLTAGE
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STMicroelectronics 121
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AUD 7.4293
Multiples of: 1

Single650 V1.65 V20 V120 A+/- 250 uA  TO - 247 - 3 SiThrough Hole488 W- 55 C+ 175 CStgwa75m65df2
IKWH40N65WR6


TO-247-3 IGBTs ROHS
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Infineon 120
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AUD 4.5715
Multiples of: 1

                
FGA30S120P


IGBT Transistors Shorted AnodeTM IGBT
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ON Semiconductor 120
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AUD 5.9243
Multiples of: 1

Single1300 V2.3 V25 V60 A500 nA  TO - 3PNTubeSiThrough Hole174 W- 55 C+ 175 CFga30s120p
IXYH82N120C3


IGBT Transistors XPT IGBT C3-Class 1200V/160A
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IXYS 120
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AUD 21.6857
Multiples of: 1

Single1200 V2.75 V30 V160 A100 nA  TO - 247AD - 3TubeSiThrough Hole1040 W- 55 C+ 150 CIxyh82n120
NGTB50N60FL2WG


IGBT Transistors 600V/50A FAST IGBT FSII T
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ON Semiconductor 119
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AUD 5.8654
Multiples of: 1

         TubeSi     
IXGH50N90B2


IGBT Transistors 50 Amps 900V 2.7 Rds
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IXYS 118
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AUD 10.62
Multiples of: 1

Single900 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh50n90
MSG40T65FL


40A 650V TO-247 IGBT Transistors / Modules ROHS
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MASPOWER 116
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AUD 1.6263
Multiples of: 1

                
IXGH24N120C3


IGBT Transistors 48 Amps 1200V
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IXYS 96
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AUD 9.3343
Multiples of: 1

Single1200 V3.6 V20 V48 A100 nA  TO - 247AD - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxgh24n120
IHW40N120R5XKSA1


IGBT Transistors TRENCHSTOP RC-H5 1350V IGBT
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Infineon 0
6 to 16 Weeks Calender.png

AUD 2.6448
Multiples of: 1

Single1200 V1.55 V20 V80 A100 uA  TO - 247 - 3Tube Through Hole394 W- 40 C+ 175 CRc - H5
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First...7677787980...

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