IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...7677787980...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGB18N40LZT4


IGBT Transistors EAS 180 mJ-400 V
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STMicroelectronics 78
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AUD 2.1885
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Single360 V 12 V   Aec - Q101D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb18n40lz
FGH40T65SHDF_F155


Fairchild Semiconductor IGBT Transistors 650V FS Gen3 Trench IGBT
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ON Semiconductor 78
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AUD 3.1743
Multiples of: 1

Single650 V1.45 V30 V80 A400 nA  TO - 247 - 3TubeSiThrough Hole268 W- 55 C+ 175 CFgh40t65shdf
APT54GA60B


IGBT Transistors FG, IGBT, 600V, TO-247
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Microchip 78
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AUD 11.9231
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      416 W   POWER MOS 8®, PT     
MLG60N60FUK


TO-247 IGBT Transistors / Modules ROHS
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Minos 77
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AUD 2.2344
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IXBH12N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS 75
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AUD 45.2318
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Single3 kV2.8 V+/- 20 V30 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole160 W- 55 C+ 150 C 
IXYN140N120A4


IGBT Transistors XPT thin-wafer technology 4th generation GenX4 Trench IGBT. Disc IGBT XPT-GenX4 SOT-227B miniBLOC
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IXYS 75
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AUD 62.2443
Multiples of: 1

         Tube      
IGW03N120H2


IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
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Infineon 73
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AUD 2.7971
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Single1200 V 20 V    TO - 247 - 3TubeSiThrough Hole - 40 C+ 150 CIgw03n120
STGFW40V60F


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
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STMicroelectronics 73
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AUD 3.1429
Multiples of: 1

Single600 V1.8 V+/- 20 V80 A250 nA  TO - 3PFTubeSiThrough Hole62.5 W- 55 C+ 175 C600 - 650V Igbts
DG30X07T2


Transistor: IGBT; 650V; 30A; 208W; TO247
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STARPOWER 73
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AUD 3.58
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      208 W         
AIKW20N60CTXKSA1


IGBT Transistors DISCRETES
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Infineon 73
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AUD 6.8269
Multiples of: 1

         TubeSi    600V Trenchstop
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First...7677787980...

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