IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...7677787980...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGF19NC60HD


IGBT Transistors N-CHANNEL MFT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 60
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AUD 3.1552
Multiples of: 1

Single600 V1.8 V /1.6 V+/- 20 V +/- 100 nA35 W TO - 220 - 3 FPTubeSiThrough Hole35 W- 55 C+ 150 CStgf19nc60hd
IXYX100N120C3


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 59
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AUD 31.254
Multiples of: 1

Single1200 V2.9 V30 V188 A100 nA  TO - 247PLUS - 3TubeSiThrough Hole1150 W- 55 C+ 175 CIxyx100n120c3
MLG40T65FUK


298W 80A 650V FS(Field Stop) TO-247 IGBT Transistors / Modules ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Minos 58
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AUD 1.629
Multiples of: 1

                
IHW15N120E1XKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 58
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AUD 3.9333
Multiples of: 1

Single1.2 kV1.5 V+/- 20 V30 A100 nA  TO - 247 - 3TubeSiThrough Hole156 W- 40 C+ 150 C 
STGW40H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
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STMicroelectronics 58
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AUD 7.2916
Multiples of: 60

Single1200 V2.1 V20 V80 A250 nA468 W TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 CStgw40h120df2
IXYH55N120C4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247
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IXYS 58
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AUD 7.3574
Multiples of: 1

Single1200 V - 30 V , + 30 V240 A    Tube Through Hole1150 W- 55 C+ 175 C1200V XPTTM Gen 10
STGWA75M65DF2


IGBT Transistors PTD HIGH VOLTAGE
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STMicroelectronics 58
Ships to you
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AUD 9.8646
Multiples of: 1

Single650 V1.65 V20 V120 A+/- 250 uA  TO - 247 - 3 SiThrough Hole488 W- 55 C+ 175 CStgwa75m65df2
DG75X12T2


Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
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STARPOWER 58
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AUD 16.1778
Multiples of: 1

      852 W         
BGH50N65HF1


Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
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BASiC Semiconductor 58
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AUD 17.2444
Multiples of: 1

      357 W   Trench, Field Stop, SiC SBD     
IGZ75N65H5XKSA1


IGBT Transistors IGBT PRODUCTS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 57
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AUD 5.5175
Multiples of: 1

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First...7677787980...

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